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Date:- 12 Aug, 2003
Data Sheet Issue:- 1
Fast Turn-off Thyristor
Type P0128SH10# to P0128SH12#
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
IT(AVM)
IT(AVM)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tcase=55°C, (note 2)
Maximum average on-state current. Tcase=85°C, (note 2)
Nominal RMS on-state current, Tcase=25°C, (note 2)
D.C. on-state current, Tcase=25°C
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 3)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 3)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 3)
I2t capacity for fusing tp=10ms, Vrm10V, (note 3)
Critical rate of rise of on-state current (repetitive), (Note 4)
Critical rate of rise of on-state current (non-repetitive), (Note 4)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Single phase; 50Hz, 180° half-sinewave.
3) Half-sinewave, 125°C Tj initial.
4) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
1000-1200
1000-1200
1000-1200
1100-1300
UNITS
V
V
V
V
MAXIMUM
LIMITS
128
83
260
206
1700
1950
19000
13700
500
1000
5
1.5
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 1 of 12
August, 2003

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Characteristics
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
PARAMETER
VTM
VTM
VT0
rT
(dv/dt)cr
IDRM
IRRM
VGT
IGT
VGD
IH
tgd
tgt
Qrr
Qra
Irm
trr
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
tq Turn-off time (note 2)
RthJ-C
RthJ-K
F
Wt
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Mounting torque
Weight
MIN.
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
10
20
-
-
11.5
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
- 2.30 ITM=280A
- 2.60 ITM=384A
- 1.60
V
V
V
- 2.49
m
- - VD=80% VDRM, Linear ramp, Gate o/c
- 20 Rated VDRM
- 20 Rated VRRM
V/µs
mA
mA
- 3.0
- 200 Tj=25°C
VD=10V, IT=3A
V
mA
- 0.25 Rated VDRM
V
- 600 Tj=25°C
mA
0.4 1.0 VD=67% VDRM, ITM=500A, di/dt=10A/µs,
0.8 2.0 IFG=2A, tr=0.5µs, Tj=25°C
µs
50 -
µC
25 45
µC
15
- ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V
A
3.0 -
µs
-
-
15
ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
25
ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
µs
- 0.23 DC
K/W
- 0.08 DC
K/W
- 14.5
Nm
130 -
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 2 of 12
August, 2003

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Distributed Gate Thyristor types P0128SH10# to P0128SH12#
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
10
12
VDRM VDSM VRRM
V
1000
1200
VRSM
V
1100
1300
VD VR
DC V
700
810
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 3 of 12
August, 2003

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Distributed Gate Thyristor types P0128SH10# to P0128SH12#
9.0 Frequency Ratings
The curves illustrated in figures 11 to 16 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f max =
1
tpulse + tq + tv
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
( )WAV = EP f and TSINK (max.) = 125 WAV Rth(J Hs)
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150µs integration time i.e.
(iii)
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 4 of 12
150 µs
Qrr = irr .dt
0
K
Factor
=
t1
t2
August, 2003

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Distributed Gate Thyristor types P0128SH10# to P0128SH12#
15.0 Reverse Recovery Loss
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
( )TSINK (new) = TSINK (original ) E k + f Rth(J Hs )
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W (TOT) = W (original) + E f
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
( )TSINK (new) = TSINK (original ) E Rth f
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2
=
4
Vr
CS di dt
Vr = Commutating source voltage
Where: CS = Snubber capacitance
R = Snubber resistance
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 5 of 12
August, 2003