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An IXYS Company
Date:- 25 Feb, 2004
Data Sheet Issue:- 1
Medium Voltage Thyristor
Types K2623T#480 to K2623T#520
Old Type No.: R1263CH45-52
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
4800-5200
4800-5200
4800-5200
4900-5300
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
2623
1819
1117
5150
4532
27
30
3.65×106
4.50×106
300
600
5
4
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Types K2623T#480 to K2623T#520 Issue 2
Page 1 of 11
February, 2004

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Characteristics
Medium Voltage Thyristor Types K2623T#480 to K2623T#520
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
Vtr On-state recovery voltage
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate-controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time (Note 2)
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
63
-
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
-
-
-
-
-
-
30
-
-
-
-
1.3
3.0
6800
2600
180
30
450
700
-
-
-
1.23
1.70
2.6 ITM=4000A
1.421
0.295
- VD=80% VDRM, linear ramp, gate o/c
200 Rated VDRM
200 Rated VRRM
- IT=6000A, tp=10ms, Tcase=25°C
3.0
600 Tj=25°C
VD=10V, IT=3A
0.25 Rated VDRM
1000 Tj=25°C
2.0 IFG=2A, tr=0.5µs, VD=67%VDRM, ITM=2000A,
4.0 di/dt=10A/µs, Tj=25°C
-
3000 ITM=2000A, tp=2000µs, di/dt=10A/µs,
- Vr=100V
-
-
-
0.008
ITM=2000A, tp=2000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=2000A, tp=2000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=200V/µs
Double side cooled
0.016 Single side cooled
77
- Outline options TC and TT
- Outline options TD and TV
V
V
m
V/µs
mA
mA
V
V
mA
V
mA
µs
µs
µC
µC
A
µs
µs
K/W
K/W
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C
2) For other clamp forces consult factory.
Notes on non-rupture rated packages.
This product is available with a non-rupture rated package.
For additional details on these products, please consult factory.
Data Sheet. Types K2623T#480 to K2623T#520 Issue 2
Page 2 of 11
February, 2004

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Medium Voltage Thyristor Types K2623T#480 to K2623T#520
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
48
50
52
VDRM VDSM VRRM
V
4800
5000
5200
VRSM
V
4900
5100
5300
VD VR
DC V
2160
2200
2240
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 300A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Square wave frequency ratings
These ratings are given for load component rate of rise of on-state current of 50A/µs.
9.0 Duty cycle lines
The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be
included as parallel to the first.
Data Sheet. Types K2623T#480 to K2623T#520 Issue 2
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February, 2004

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Medium Voltage Thyristor Types K2623T#480 to K2623T#520
10.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
tp1
IG
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
11.0 Computer Modelling Parameters
11.1 Device Dissipation Calculations
I AV = −VT 0 +
VT
2
0
+ 4
ff
rT
WAV
2 ff rT
and:
WAV
=
T
Rth
T = Tj max THs
Where VT0=1.421V, rT=0.295mΩ,
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
Conduction Angle
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Supplementary Thermal Impedance
30° 60° 90° 120°
0.00915 0.00907 0.00898 0.00891
0.01795 0.01781 0.01772 0.01759
0.00911 0.00903 0.00895 0.00884
0.01784 0.01775 0.01763 0.01735
180°
0.00878
0.01731
0.00867
0.01682
270°
0.00864
0.01678
d.c.
0.008
0.016
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
Form Factors
60° 90°
2.449
2
2.778
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
Data Sheet. Types K2623T#480 to K2623T#520 Issue 2
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February, 2004

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Medium Voltage Thyristor Types K2623T#480 to K2623T#520
11.2 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 6 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ln(IT )+ C IT + D IT
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for VT agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
A 6.878409
B -1.107307
C -3.2302431×10-4
D 0.09985874
125°C Coefficients
A 2.31712993
B -0.1605662
C 2.676208×10-4
D 8.603465×10-3
11.3 D.C. Thermal Impedance Calculation
rt
=
p=n
rp
p =1
1
t
eτ p


Where p = 1 to n, n is the number of terms in the series and:
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
τp = Time Constant of rth term.
The coefficients for this device are shown in the tables below:
Term
rp
τp
1
4.293445×10-3
0.8365194
D.C. Double Side Cooled
2
2.542182×10-3
0.176198
Term
rp
τp
1
9.899658×10-3
5.623142
D.C. Single Side Cooled
23
2.731068×10-3
2.619106×10-3
1.132481
0.1461472
3
1.167986×10-3
0.02000819
4
1.049687×10-3
0.01849926
Data Sheet. Types K2623T#480 to K2623T#520 Issue 2
Page 5 of 11
February, 2004