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WESTCODE
An IXYS Company
Date:- 31 Jan, 2008
Data Sheet Issue:- 1
Provisional Data
Anode Shorted Gate Turn-Off Thyristor
Types G1000QC400 to G1000QC450
Absolute Maximum Ratings
VDRM
VRSM
VDC-link
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Maximum continuos DC-link voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
4500
4500
2800
18
18
UNITS
V
V
V
V
V
ITGQ
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tj op
Tstg
RATINGS
Peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQ, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms, (Note 4)
Peak non-repetitive surge current tp=2ms, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6).
Minimum permissible off-time (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=2800V, VDM4500V diGQ/dt=25A/µs, ITGQ=1000A and CS=1µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Tj(initial)=125°C, single phase, 180° sinewave, re-applied voltage VD=VR10V.
5) For di/dt>300A/µs please consult the factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1000
300
443
867
6500
11450
211.25×103
300
185
7
100A
18
80
20
-40 to +125
-40 to +125
UNITS
A
nH
A
A
A
kA
A2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Provisional Data Sheet. Types G1000QC400 to G1000QC450 Issue 1
Page 1 of 15
January, 2008

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WESTCODE An IXYS Company
Characteristics
Anode Shorted Gate Turn-Off Thyristor types G1000QC400 to G1000QC450
VTM
IL
IH
dv/dtcr
IDRM
IRRM
IGKM
Parameter
Maximum peak on-state voltage
Latching current
Holding current.
Critical rate of rise of off-state voltage
Peak off state current
Peak reverse current
Peak negative gate leakage current
VGT Gate trigger voltage
IGT Gate trigger current
td Delay time
tgt Turn-on time
tf Fall time
tgq Turn-off time
IGQ Peak turn-off gate current
QGQ Turn-off gate charge
ttail Tail time
tgw Gate off-time (note 3)
RthJK Thermal resistance junction to sink
F Mounting force
Wt Weight
MIN
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
-
-
-
13
-
TYP MAX TEST CONDITIONS
UNITS
3.75
10
10
-
-
-
-
1.0
0.8
0.6
2
0.8
0.2
0.1
3.0
4.0 IG=2A, IT=1000A
- Tj=25°C
- Tj=25°C
- VD=2800V, VGR=-2V
50 Rated VDRM, VGR=-2V
60 VRR=16V
60 VGR=-16V
- Tj=-40°C
- Tj=25°C
VD=25V, RL=25m
- Tj=125°C
3.5 Tj=-40°C
1.5 Tj=25°C
VD=25V, RL=25m
0.4 Tj=125°C
- VD=2800V, ITGQ=1000A, diT/dt=300A/µs, IGM=20A,
6.0 diG/dt=20A/µs
V
A
A
V/µs
mA
mA
mA
V
V
V
A
A
A
µs
µs
1.2 -
µs
13 16
µs
275
- VD=2800V, ITGQ=1000A, diGQ/dt=25A/µs, VGR=-16V,
A
1.8 3.0 CS=1µF
mC
35 50
µs
--
µs
- 0.038 Double side cooled
K/W
- 0.061 Cathode side cooled
K/W
- 0.101 Anode side cooled
K/W
- 17 (see note 2)
kN
325 -
g
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
3) The gate off-time, is the period during which the gate circuit is required to remain at low impedance to allow for the passage of
tail current.
Provisional Data Sheet. Types G1000QC400 to G1000QC450 Issue 1
Page 2 of 15
January, 2008

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Anode Shorted Gate Turn-Off Thyristor types G1000QC400 to G1000QC450
Notes on ratings and characteristics.
1. Maximum Ratings.
1.1 Off-state voltage ratings.
Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. For
other gate conditions see the curves of figure 5. It should be noted that VDRM is the repeatable peak
voltage which may be applied to the device and does not relate to a DC operating condition.
Diagram 1.
1.2 Reverse voltage rating.
All devices in this series have a minimum VRRM of 18 Volts.
1.3 Peak turn-off current.
The figure given in maximum ratings is the highest value for normal operation of the device under
conditions given in note 2 of ratings. For other combinations of ITGQ, VD and Cs see the curves in figures
14 & 15. The curves are effective over the normal operating range of the device and assume a snubber
circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is
employed then the equivalent CS should be used and Ls<0.3µH must be ensured for the curves to be
applied.
Ls
Ds R
Cs
Diagram 2.
1.4 R.M.S and average current.
Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-
sinewave. These are included as a guide to compare the alternative types of GTO thyristors available,
values can not be applied to practical applications, as they do not include switching losses.
1.5 Surge rating and I2t.
Ratings are for half-sinewave, peak value against duration is given in the curve of figure 2.
1.6 Snubber loop inductance.
Use of GTO thyristors with snubber loop inductance, Ls<0.3µH implies no dangerous Vs voltages (see
diagrams 2 & 3) can be applied, provided the other conditions given in note 1.3 are enforced. Alternatively
Vs should be limited to 800 Volts to avoid possible device failure.
Provisional Data Sheet. Types G1000QC400 to G1000QC450 Issue 1
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January, 2008

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Anode Shorted Gate Turn-Off Thyristor types G1000QC400 to G1000QC450
1.7 Critical rate of rise of on-state current
The value given is the maximum repetitive rating, but does not imply any specific operating condition. The
high turn-on losses associated with limit di/dt would not allow for practical duty cycle at this maximum
condition. For special pulse applications, such as crowbars and pulse power supplies, a much higher di/dt
is possible. Where the device is required to operate with infrequent high current pulses, with natural
commutation (i.e. not gate turn-off), then di/dt>5kA/µs is possible. For this type of operation individual
specific evaluation is required.
1.8 Gate ratings
The absolute conditions above which the gate may be damaged. It is permitted to allow VGK(AV) during turn-
off to exceed VRGM which is the implied DC condition.
1.9 Minimum permissible off time.
This time relates specifically to re-firing of device (see also note on gate-off time 2.7). The value given in
the ratings applies only to operating conditions of ratings note 2.
1.10 Minimum permissible on-time.
Figure is given for minimum time to allow complete conduction of all the GTO thyristor islands. Where a
simple snubber, of the form given in diagram 1. (or any other non-energy recovery type which discharges
through the GTO at turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time
constant, which must be allowed to fully discharge before the GTO thyristor is turned off. If the anode
circuit has di/dt<10A/µs then the minimum on-time should be increased, the actual value will depend upon
the di/dt and operating conditions (each case needs to be assessed on an individual basis).
Provisional Data Sheet. Types G1000QC400 to G1000QC450 Issue 1
Page 4 of 15
January, 2008

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Anode Shorted Gate Turn-Off Thyristor types G1000QC400 to G1000QC450
2 Characteristics
2.1 Instantaneous on-state voltage
Measured using a 500µs square pulse, see also the curves of figure 1 for other values of ITM.
2.2 Latching and holding current
These are considered to be approximately equal and only the latching current is measured, type test only
as outlined below. The test circuit and wave diagrams are given in diagram 4. The anode current is
monitored on an oscilloscope while VD is increased, until the current is seen to flow during the un-gated
period between the end of IG and the application of reverse gate voltage. Test frequency is 100Hz with IGM
& IG as for td of characteristic data.
IGM IG
100µs
Gate current
100µs
16V
Anode current
R1
Unlatched
unlatched condition
CT
Gate-drive
DUT
C1 Vs
Latched
Anode current
Latched condition
Diagram 4, Latching test circuit and waveforms.
2.3 Critical dv/dt
The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to
dv/dt at turn-off. The measurement, type test only, is conducted using the exponential ramp method as
shown in diagram 5. It should be noted that GTO thyristors have a poor static dv/dt capability if the gate is
open circuit or RGK is high impedance. Typical values: - dv/dt<100V/µs for RGK>10.
Diagram 5, Definition of dV/dt.
2.4 Off-state leakage.
For IDRM & IRRM see notes 1.1 & 1.2 for gate leakage IGK, the off-state gate circuit is required to sink this
leakage and still maintain minimum of –2 Volts. See diagram 6.
Diagram 6.
Provisional Data Sheet. Types G1000QC400 to G1000QC450 Issue 1
Page 5 of 15
January, 2008