Technical Data :
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R0964LS12E
- Power Thyristor
1200 VDRM;
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HIGH POWER THYRISTOR FOR INVERTER AND CHOPPER APPLICATIONS
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Blocking capabilty up to 1200 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device
Type
VRRM (1) VDRM (1) VRSM (1)
R0964LS12E 1200
1200
1300
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage and off state leakage
Critical rate of voltage rise
(4)
IRRM / IDRM
dV/dt
70 mA (3)
200 V/µsec
Conducting - on state
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 µF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Parameter
Average value of on-state current
Peak one cPSTCle surge
(non repetitive) current
I square t
Latching current
Holding current
Peak on-state voltage
Critical rate of rise of on-state
current (5, 6)
Critical rate of rise of on-state
current (6)
Symbol Min.
IT(AV)
ITSM
I2t
IL
IH
VTM
di/dt
di/dt
Max.
Typ.
622
9400
442000
1000
500
1.96
200
100
Units Conditions
Sinewave,180o conduction,Tsink=85oC
A
A2s
mA
mA
V
A/µs
A/µs
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
10.0 msec
VD = 24 V; RL= 12 ohms
VD = 24 V; I = 2.5 A
ITM = 1400 A; Duty cPSTCle ≤ 0.01%
Tj = 125 oC
Switching from VDRM ≤ 1000 V,
non-repetitive
Switching from VDRM ≤ 1000 V