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Date:- 01 August 2012
Data Sheet Issue:- 3
Distributed Gate Thyristor
Type R0830LC12x to R0830LC14x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Single Shot
Critical rate of rise of on-state current (note 6) Repetitive (50Hz, 60s)
Continuous (50Hz)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
1200-1400
1200-1400
1200-1400
1300-1500
UNITS
V
V
V
V
MAXIMUM
LIMITS
830
528
289
1713
1318
8500
9350
361×103
437×103
1500
1000
500
5
2
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
V
W
W
°C
°C
Data Sheet. Types R0830LC12x to R0830LC14x Issue 3
Page 1 of 12
August 2012

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Characteristics
Distributed Gate Thyristor Types R0830LC12x to R0830LC14x
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time (note 2)
RthJK
F
Wt
Thermal resistance, junction to heatsink
(note 3)
Mounting force
Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
15
-
-
10
-
TYP. MAX. TEST CONDITIONS (Note 1)
- 2.4 ITM=1400A
- 1.9
- 0.357
- - VD=80% VDRM, Linear ramp, Gate o/c
- 70 Rated VDRM
- 70 Rated VRRM
- 3.0
Tj=25°C
- 300
VD=10V, IT=3A
- 0.25 Rated VDRM
- 1000 Tj=25°C
0.4 1.0 VD=67% VDRM, ITM=1500A, di/dt=60A/µs,
0.8 2.0 IFG=2A, tr=0.5µs, Tj=25°C
285 -
110 130 ITM=1000A, tp=1000µs, di/dt=60A/µs,
95 - Vr=50V
2.7 -
25
-
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs
-
35
IITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs
- 0.032 Double side cooled
- 0.064 Single side cooled
- 20
340 - Outline option LC
UNITS
V
V
m
V/µs
mA
mA
V
mA
V
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering
information for details of tq codes.
3) For other clamp forces, please consult factory
Data Sheet. Types R0830LC12x to R0830LC14x Issue 3
Page 2 of 12
August 2012

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Distributed Gate Thyristor Types R0830LC12x to R0830LC14x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
12
14
VDRM VDSM
V
1200
1400
VRRM
V
1200
1400
VRSM
V
1300
1500
VD
DC V
1300
1500
VR
DC V
810
930
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types R0830LC12x to R0830LC14x Issue 3
Page 3 of 12
August 2012