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WESTCODE
An IXYS Company
Date:- 3 July, 2007
Data Sheet Issue:- 2
Provisional Data
Asymmetric Thyristor
Types A0516YC200 to A0516YC280
Development Type No.: AX195YC280
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
2800
2800
10
10
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)M
IT(d.c.)
ITSM2
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Critical rate of rise of on-state current (repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
516
341
196
1040
850
5700
1.51×103
2000
1000
10
10
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A2s
A/µs
A/µs
V
W
W
°C
°C
Provisional Data Sheet. Types A0516YC200- to A0516YC280 AD Issue 2
Page 1 of 10
July 2007

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WESTCODE An IXYS Company
Characteristics
Asymmetric Thyristor Types A0516YC200 to A0516YC280
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate-controlled turn-on delay time
tgt Turn-on time
tq Turn-off time
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
-
3000
-
-
-
-
-
-
-
-
-
-
-
-
5
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
- 2.45 ITM=1000A
- 4.44 ITM=3000A
V
V
- 1.63
V
- 0.85
m
- - VD=80% VDRM, linear ramp, gate o/c
- 40 Rated VDRM
- 40 Rated VRRM
V/µs
mA
mA
- 3.0
- 400 Tj=25°C
VD=10V, IT=3A
V
mA
- 0.25 Rated VDRM
- 1000 Tj=25°C
V
mA
0.5 1.0 VD=67% VDRM, IT=1200A, di/dt=200A/µs,
1.0 2.0 IFG=2A, tr=0.5µs, Tj=25°C
µs
µs
38
55
-
-
ITM=400A, tp=500µs, di/dt=40A/µs, Vr=10V,
Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=400A, tp=500µs, di/dt=40A/µs, Vr=10V,
Vdr=80%VDRM, dVdr/dt=200V/µs
µs
- 0.05 Double side cooled
K/W
- 0.10 Single side cooled
K/W
- 9 (See note 2)
kN
90 -
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) For all other mounting forces, please consult factory.
Provisional Data Sheet. Types A0516YC200- to A0516YC280 AD Issue 2
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July 2007

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Asymmetric Thyristor Types A0516YC200 to A0516YC280
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
20
22
24
26
28
VDRM VDSM
V
2000
2200
2400
2600
2800
VRRM
10
10
10
10
10
VD
DC V
1250
1350
1450
1550
1650
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 2000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 3. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Provisional Data Sheet. Types A0516YC200- to A0516YC280 AD Issue 2
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July 2007

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Asymmetric Thyristor Types A0516YC200 to A0516YC280
8.0 Computer Modelling Parameters
8.1 Device Dissipation Calculations
I AV = −VT 0 +
VT 02 + 4 ff 2 rT WAV
2 ff 2 rT
and:
Where VT0=1.63V, rT=0.85mΩ,
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
WAV
=
T
Rth
T = Tj max TK
Conduction Angle
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Supplementary Thermal Impedance
30° 60° 90° 120°
0.071 0.069 0.065 0.061
0.12 0.119 0.115 0.111
0.053 0.052 0.0516 0.0513
0.103 0.102 0.1017 0.1013
180°
0.057
0.107
0.0505
0.1005
270°
0.053
0.103
d.c.
0.05
0.1
Conduction Angle
Square wave
Sine wave
Form Factors
30°
60°
90°
120°
180°
270°
d.c.
3.46 2.45 2 1.73 1.41 1.15 1
3.98 2.78 2.22 1.88 1.57
8.2 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 6 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ln(IT ) + C IT + D IT
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for VT agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
A -1.436149
B 1.107088
C 2.172417×10-3
D -0.1872504
125°C Coefficients
A 0.7634106
B 0.3274219
C 1.623348×10-3
D -0.06984001
Provisional Data Sheet. Types A0516YC200- to A0516YC280 AD Issue 2
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July 2007

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Asymmetric Thyristor Types A0516YC200 to A0516YC280
8.3 D.C. Thermal Impedance Calculation
rt
=
p=n
rp
p =1
1
t
eτ p


Where p = 1 to n, n is the number of terms in the series and:
t = Duration of heating pulse in seconds.
r
t
=
Thermal resistance at time t.
rp = Amplitude of pth term.
τp = Time Constant of rth term.
The coefficients for this device are shown in the tables below:
Term
rp
τp
D.C. Double Side Cooled
1
0.0200056
2
9.923438×10-3
3
0.01433715
0.3391689
0.1269073
0.03562131
4
4.284403×10-3
2.562946×10-3
Term
rp
τp
D.C. Single Side Cooled
123
0.06157697 8.431182×10-3 0.01031315
2.136132
1.212898
0.1512408
4
0.01613806
0.04244
5
5.181088×10-3
2.889595×10-3
Provisional Data Sheet. Types A0516YC200- to A0516YC280 AD Issue 2
Page 5 of 10
July 2007