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Date:- 22th June, 2015
Data Sheet Issue:- P1
Medium Voltage Thyristor
Types K0625QA600 & K0625QA650
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
6000-6500
6000-6500
6000-6500
6100-6600
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current. Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=1300A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
640
450
255
1240
1125
7.7
8.5
296×103
361×103
200
1000
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types K0625QA600 and K0625QA650 Issue P1.
Page 1 of 10
June, 2015

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Characteristics
Medium Voltage Thyristor Types K0625QA600 and K0625QA650
PARAMETER
VTM Maximum peak on-state voltage
V0 Threshold voltage
rT Slope resistance
dv/dt Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered Charge
Qra Recovered Charge, 50% chord
Irm Reverse recovery current
trr Reverse recovery time, 50% chord
tq Turn-off time
R Thermal resistance, junction to
thJK heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
650
1000
-
-
-
16
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
-
-
-
-
-
-
-
-
-
0.5
1.5
4750
1550
115
27
-
-
-
-
-
-
300
3.20 ITM=1000A
1.46
1.75
- VD=80% VDRM, Linear ramp, gate o/c
150 Rated VDRM
150 Rated VRRM
3.0
Tj=25°C, VD=10V, IT=3A
300
1000
1.6
5.0
Tj=25°C
IFG=2A, tr=0.5µs, VD=67%VDRM,
ITM=1000A, di/dt=10A/µs, Tj=25°C
5000
- ITM=1000A, tp=1000µs, di/dt=10A/µs,
125 Vr=100V
-
850
1100
0.026
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=20V/µs
(Note 2)
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=200V/µs
(Note 2)
Double side cooled
0.062 Cathode side cooled
0.046 Anode side cooled
20 (Note 3)
-
V
V
m
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
K/W
kN
kg
Notes: -
1) Unless otherwise stated Tj=125°C.
2) Standard test condition for tq dVdr/dt=20V/µs. For other dVdr/dt values please consult factory.
3) For other clamp forces please consult factory.
Data Sheet. Types K0625QA600 and K0625QA650 Issue P1.
Page 2 of 10
June, 2015

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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Medium Voltage Thyristor Types K0625QA600 and K0625QA650
Voltage Grade
60
65
VDRM VDSM VRRM
V
6000
6500
VRSM
V
6100
6600
VD VR
DC V
3320
3600
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
IAV = − V0 +
V0 + 4 ff rs WAV
2 ff rs
and:
WAV
=
T
Rth
T = T j max THs
Where VT0=1.46V, rT=1.75mΩ,
Rth = Supplementary thermal impedance, see table below.
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave Double Side Cooled
Square wave Anode Side Cooled
Square wave Cathode Side Cooled
Sine wave Double Side Cooled
Sine wave Anode Side Cooled
Sine wave Cathode Side Cooled
30°
0.0292
0.0496
0.0649
0.0289
0.0492
0.0647
60°
0.0288
0.0492
0.0646
0.0284
0.0487
0.0642
90°
0.0284
0.0488
0.0642
0.0280
0.0483
0.0639
120°
0.0281
0.0484
0.0639
0.0277
0.0480
0.0635
180°
0.0275
0.0478
0.0633
0.0268
0.0470
0.0627
270°
0.0267
0.0470
0.0626
d.c.
0.0260
0.0460
0.0620
Conduction Angle
Square wave
Sine wave
30°
3.46
3.98
Form Factors
60° 90°
2.45 2
2.78 2.22
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
Data Sheet. Types K0625QA600 and K0625QA650 Issue P1.
Page 3 of 10
June, 2015

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Medium Voltage Thyristor Types K0625QA600 and K0625QA650
5.2 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 5 is represented in two ways;
(i) the well established Vo and rs tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ln(IT ) + C IT + D IT
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for VT agree with the true device characteristic over a current range, which is limited
to that plotted.
25°C Coefficients
A 3.266848
B 2.539156
C 1.259376×10-3
D -2.176805×10-3
125°C Coefficients
A -1.353413
B 0.656117
C 2.153684×10-3
D -6.666220×10-2
5.3 D.C. Thermal Impedance Calculation
rt
=
p=n
rp
p =1
⎜⎜⎛1
t
eτ p
⎟⎞
Where p = 1 to n, n is the number of terms in the series and:
t = Duration of heating pulse in seconds.
r = Thermal resistance at time t.
t
rp = Amplitude of pth term.
τp = Time Constant of rth term.
Term
rp
τp
1
0.0164289
0.7505740
D.C. Double Side Cooled
2
6.949134×10-3
0.1072456
3
2.674059×10-3
1.26402×10-2
Term
rp
τp
1
0.04752154
5.068354
D.C. Cathode Side Cooled
2
0.01107079
0.1859098
3
3.335446×10-3
0.01501449
Term
rp
τp
1
0.03041634
3.373965
D.C. Anode Side Cooled
2
8.416605×10-3
3
5.395695×10-3
0.3998093
0.06782489
4
2.067790×10-3
1.038352×10-2
Data Sheet. Types K0625QA600 and K0625QA650 Issue P1.
Page 4 of 10
June, 2015

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Medium Voltage Thyristor Types K0625QA600 and K0625QA650
Curves
Figure 1 - On-state characteristics of Limit device
10000
K0625QA600-650
Issue P1
Figure 2 - Transient Thermal Impedance
0.1
K0625QA600-650
Issue P1
KSC 0.062K/W
ASC 0.046K/W
DSC 0.026K/W
Tj = 25°C
Tj = 125°C
0.01
1000
0.001
0.0001
0.00001
100
0
2 4 6 8 10
Instantaneous On-state voltage - VTM (V)
12
0.000001
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Time (s)
Figure 3 - Gate Characteristics - Trigger Limits
6
K0625QA600-650
Issue P1
Tj=25°C
5
Max VG dc
4
IGT, VGT
3
2
1
IGD, VGD
0
0
Min VG dc
0.2 0.4 0.6 0.8
Gate Current - IG (A)
1
Figure 4 - Gate Characteristics - Power Curves
20
K0625QA600-650
Issue P1
18 Tj=25°C
16
14
Max VG dc
12
10
8
PG Max 30W dc
6
4
Min VG dc
2 PG(AV) 2W
0
0 2 4 6 8 10
Gate Current - IG (A)
Data Sheet. Types K0625QA600 and K0625QA650 Issue P1.
Page 5 of 10
June, 2015