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Date:- 4 Oct, 2001
Data Sheet Issue:- 1
Phase Control Thyristor
Types N0255WC120 to N0255WC160
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1200-1600
1200-1600
1200-1600
1300-1700
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current. Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=500A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
255
176
99
502
439
2450
2695
30×103
36.3×103
500
1000
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types N0255WC120 to N0255WC160 Issue 1.
Page 1 of10
October, 2001

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Characteristics
N0255WC120 to N0255WC160
PARAMETER
VTM
V0
rS
dv/dt
IDRM
IRRM
VGT
IGT
IH
tgd
tgt
Qrr
Qra
Irm
trr
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
tq Turn-off time
Rth(j-hs) Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3.3
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
- 1.75 ITM=475A
- 1.57
V
V
- 2.29
m
- - VD=80% VDRM, linear ramp, Gate O/C
V/µs
- 20 Rated VDRM
- 20 Rated VRRM
mA
mA
- 3.0
Tj=25°C, VD=6V, IT=1A
- 150
V
mA
- 600 Tj=25°C
mA
0.5 1.0 VD=67%VDRM, ITM=500A, di/dt=10A/µs,
1.0 2.0 IFG=2A, tr=0.5µs, Tj=25°C
µs
280 -
µC
150 175
µC
ITM=100A, tp=500µs, di/dt=10A/µs, Vr=100V
40 -
A
7.5 -
µs
100
135
120
ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
160
ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
µs
- 0.135 Double side cooled
K/W
- 0.3 Single side cooled
K/W
- 5.5
kN
70 -
g
Notes: -
1) Unless otherwise indicated Tj=125°C.
Data Sheet. Types N0255WC120 to N0255WC160 Issue 1.
Page 2 of10
October, 2001

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N0255WC120 to N0255WC160
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
12
14
16
VDRM VDSM VRRM
V
1200
1400
1600
VRSM
V
1300
1500
1700
VD VR
DC V
810
930
1040
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
6.0 Gate Drive
The recommended pulse gate drive is 30V, 30with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The pulse duration may need to be configured according to the application but should be no shorter than
20µs, otherwise an increase in pulse current may be needed to supply the necessary charge to trigger.
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
I AV = − V0 +
V0 2 + 4 ff 2 rs WAV
2 ff 2 rs
and:
Where V0=1.57V, rs=2.29mΩ,
Rth = Supplementary thermal impedance, see table below.
ff = Form factor, see table below.
WAV
=
T
Rth
T = Tj max THs
Conduction Angle
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Supplementary Thermal Impedance
30°
0.163
0.3272
0.1588
0.3191
60°
0.158
0.3194
0.1527
0.3113
90°
0.1537
0.3144
0.1487
0.3076
120°
0.1501
0.311
0.1452
0.3051
180°
0.1442
0.3064
0.1367
0.2995
270°
0.1376
0.3016
d.c.
0.135
0.3
Conduction Angle
Square wave
Sine wave
Form Factors
30° 60° 90°
3.46 2.45
2
3.98 2.78 2.22
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
Data Sheet. Types N0255WC120 to N0255WC160 Issue 1.
Page 3 of10
October, 2001