VBO20-12AO2.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 VBO20-12AO2 데이타시트 다운로드

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Single Phase Rectifier Bridge
Standard and Avalanche Types
VBO 20
IdAV =
31 A
VRRM = 800-1600 V
VRSM
V
900
1300
1700
VBRmin
V
1230
1630
VRRM
V
800
1200
1600
Standard
Types
VBO 20-08NO2
VBO 20-12NO2
VBO 20-16NO2
Avalanche
Types
VBO 20-12AO2
VBO 20-16AO2
 For Avalanche Types only
+
~
~
-
~ ­­-
+
~
Symbol
IdAV ‚
IdAVM
PRSM
IFSM
I2t
TVJ
TVJM
Tstg
VISOL
Md
Weight
Conditions
TC = 85°C, module
module
TVJ = TVJM
TVJ = 45°C; t = 10 ms
VR = 0
t = 8.3 ms
TVJ = TVJM;
VR = 0
t = 10 ms
t = 8.3 ms
TVJ = 45°C; t = 10 ms
VR = 0
t = 8.3 ms
TVJ = TVJM;
VR = 0
t = 10 ms
t = 8.3 ms
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
50/60 Hz, RMS t = 1 min
IISOL < 1 mA
t=1s
Mounting torque (M5)
(10-32 UNF)
Typ.
Maximum Ratings
31 A
40 A
3.4 kW
300 A
315 A
250 A
265 A
450 A2s
420 A2s
312 A2s
290 A2s
-40...+150
150
-40...+125
°C
°C
°C
3000
3600
V~
V~
1.5-2 Nm
13-18 lb.in.
15 g
Symbol Conditions
Characteristic Values
IR
VF
VT0
rt
RthJC
RthJH
dS
dA
a
VR = VRRM
TVJ = 25°C
TVJ = TVJM
IF = 55 A
TVJ = 25°C
For power-loss calculations only
per diode; 120° el.
per module
per diode; 120° el.
per module
Creeping distance on surface
Creepage distance in air ƒ
Max. allowable acceleration
0.3 mA
5.0 mA
1.8 V
0.85 V
14 mW
3.00 K/W
0.75 K/W
3.40 K/W
0.85 K/W
13 mm
9.5 mm
50 m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
­‚ for resistive load at bridge output
ƒ with isolated fast-on tabs.
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
Features
• Avalanche rated parts available
• Package with DCB ceramic base plate
• Isolation voltage 3600 V~
• Planar passivated chips
• Low forward voltage drop
• ¼" fast-on terminals
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with one screw
• Space and weight savings
• Improved temperature & power cycling
Dimensions in mm (1 mm = 0.0394“)
20100706b
1-2

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VBO 20
Fig. 1 Surge overload current per diode
IFSM: Crest value, t: duration
Fig. 2 I2t versus time (1-10 ms)
per diode
Fig. 3 Max. forward current at case
temperature
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Transient thermal impedance junction to heatsink per diode
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
Constants for ZthJK calculation:
i Rthi (K/W)
1 0.775
ti (s)
0.0788
2 1.390
0.504
3 1.255
3.701
20100706b
2-2