VBO21-12NO7.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 VBO21-12NO7 데이타시트 다운로드

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Standard Rectifier Module
1~ Rectifier Bridge
Part number
VBO21-12NO7
K NA D
VBO21-12NO7
13~
Rectifier
VRRM =
I DAV =
I FSM =
1200 V
20 A
120 A
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For one phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: ECO-PAC1
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Height: 9 mm
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a

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Rectifier
Symbol
VRSM
VRRM
IR
VF
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 1200 V
VR = 1200 V
forward voltage drop
IF = 10 A
IF = 20 A
IF = 10 A
IF = 20 A
bridge output current
TC = 115°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
VBO21-12NO7
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
Ratings
min. typ. max.
1300
1200
10
0.7
1.20
1.41
1.14
1.42
20
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.84 V
28.8 m
2.5 K/W
0.4 K/W
50 W
120 A
130 A
100 A
110 A
72 A²s
70 A²s
50 A²s
50 A²s
4 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a

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VBO21-12NO7
Package ECO-PAC1
Symbol
I RMS
Tstg
T VJ
Weight
Definition
RMS current
storage temperature
virtual junction temperature
Conditions
per terminal
MD mounting torque
d Spp/App
d Spb/Apb
creepage distance on surface | striking distance through air
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
terminal to terminal
terminal to backside
50/60 Hz, RMS; IISOL 1 mA
Ratings
min.
-40
-40
1.5
typ. max.
100
125
150
19
2
6.0
10.0
3000
2500
Unit
A
°C
°C
g
Nm
mm
mm
V
V
Logo
Made in Germany
YYCW Lot#
XXX XX-XXXXX
Part Number
Circuit Diagram
Date Code
Ordering
Standard
Part Number
VBO21-12NO7
Marking on Product
VBO21-12NO7
Delivery Mode
Box
Quantity Code No.
25 479527
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max
R0 max
threshold voltage
slope resistance *
0.84
27.6
* on die level
T VJ = 150 °C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a

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Outlines ECO-PAC1
VBO21-12NO7
K NA D
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a

No Preview Available !

VBO21-12NO7
Rectifier
40
100
50 Hz
0.8 x V RRM
100
VR = 0 V
30
IF
20
[A]
10
TVJ =
125°C
150°C
0
0.4 0.8
TVJ = 25°C
1.2 1.6
VF [V]
80
IFSM
[A] 60
TVJ = 45°C
TVJ = 150°C
I2t
[A2s]
TVJ = 45°C
TVJ = 150°C
40 10
2.0
10-3
10-2
10-1
100
1
t [s]
t [ms]
10
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I2t vs. time per diode
30
20
Ptot
[W]
10
DC =
1
0.5
0.4
0.33
0.17
0.08
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
40
30
IF(AV)M
20
[A]
10
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 5 10 15 0 25 50 75 100 125 150 175
IdAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
3.0
2.5
2.0
ZthJC
1.5
[K/W]
1.0
0.5
Constants for ZthJC calculation:
i Rth (K/W)
ti (s)
1 1.359
0.1015
2 0.3286 0.1026
3 0.1651 0.4919
4 0.6473 0.62
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a