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Standard Rectifier Module
1~ Rectifier Bridge
Part number
VBO36-12NO8
VBO36-12NO8
13~
Rectifier
VRRM =
I DAV =
I FSM =
1200 V
18 A
550 A
-
~~
+
Features / Advantages:
Planar passivated chips
Very low leakage current
Very low forward voltage drop
Improved thermal behaviour
Applications:
Diode for main rectification
For one phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: FO-B
Industry standard outline
RoHS compliant
¼“ fast-on terminals
Easy to mount with one screw
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130603c

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Rectifier
Symbol
VRSM
VRRM
IR
VF
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 1200 V
VR = 1200 V
forward voltage drop
IF = 15 A
IF = 30 A
IF = 15 A
IF = 30 A
bridge output current
TC = 85°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
VBO36-12NO8
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
Ratings
min. typ. max.
1300
1200
40
1.5
1.04
1.14
0.93
1.06
18
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.76 V
9.1 m
7 K/W
1 K/W
17 W
550 A
595 A
470 A
505 A
1.52 kA²s
1.48 kA²s
1.11 kA²s
1.06 kA²s
18 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130603c

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VBO36-12NO8
Package FO-B
Symbol
I RMS
Tstg
T VJ
Weight
Definition
RMS current
storage temperature
virtual junction temperature
Conditions
per terminal
MD mounting torque
d Spp/App
d Spb/Apb
creepage distance on surface | striking distance through air
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
terminal to terminal
terminal to backside
50/60 Hz, RMS; IISOL 1 mA
Ratings
min.
-40
-40
1.8
typ. max.
100
125
150
19
2.2
9.0 7.0
10.0 10.0
3000
2500
Unit
A
°C
°C
g
Nm
mm
mm
V
V
Logo
XXX XX-XXXXX YYWW
Marking on product
Date Code
Ordering
Standard
Part Number
VBO36-12NO8
Marking on Product
VBO36-12NO8
Delivery Mode
Box
Quantity Code No.
50 471984
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max
R0 max
threshold voltage
slope resistance *
0.76
7.9
* on die level
T VJ = 150 °C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130603c

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Outlines FO-B
6.3 x 0.8
VBO36-12NO8
DE
B
A
-
~~
+
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130603c

No Preview Available !

VBO36-12NO8
Rectifier
60
50
40
IF
30
[A]
20
TVJ =
10
125°C
150°C
TVJ = 25°C
0
0.4 0.8 1.2
VF [V]
Fig. 1 Forward current vs.
voltage drop per diode
450
400
IFSM350
[A] 300
250
50 Hz
0.8 x V RRM
1600
VR = 0 V
TVJ = 45°C
TVJ = 150°C
1200
I2t
800
[A2s]
TVJ = 45°C
TVJ = 150°C
400
200
10-3
10-2
10-1
t [s]
100
Fig. 2 Surge overload current
vs. time per diode
1 10
t [ms]
Fig. 3 I2t vs. time per diode
10
8
Ptot 6
DC =
1
0.5
0.4
0.33
0.17
0.08
[W] 4
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
2
0
0 2 4 6 8 10 0 25 50 75 100 125 150 175
IF(AV)M [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
24
20
16
IF(AV)M
12
[A]
8
DC =
1
0.5
0.4
0.33
0.17
0.08
4
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
8
6
ZthJC
4
[K/W]
2
0
1
10
100
1000
10000
100000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 0.040
2 0.150
3 1.710
4 5.100
ti (s)
0.005
0.030
0.400
2.300
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130603c