VBO40.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 VBO40 데이타시트 다운로드

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Single Phase
Rectifier Bridge
VBO 40
IdAV = 40 A
VRRM = 800-1600 V
VRSM
V
900
1300
1700
VRRM
V
800
1200
1600
Standard
Types
VBO 40-08NO6
VBO 40-12NO6
VBO 40-16NO6
+ miniBLOC, SOT-227 B
E72873 ~
~~
~
+
Symbol
IdAV
IdAV ¬
IFSM
I2t
TVJ
TVJM
T
stg
VISOL
M
d
Weight
Test Conditions
TC = 100°C
TVJ = 45°C;
VR = 0
TVJ = TVJM
V =0
R
TVJ = 45°C
VR = 0
TVJ = TVJM
V =0
R
(diode)
(module)
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50/60 Hz, RMS
IISOL 1 mA
Mounting torque (M4)
Terminal connection torque (M4)
typ.
Maximum Ratings
20 A
40 A
300 A
320 A
260 A
280 A
450 A2s
430 A2s
340 A2s
330 A2s
-40...+150
150
-40...+125
°C
°C
°C
2500
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Features
l Isolation voltage 2500 V~
l Planar passivated chips
l Low forward voltage drop
Applications
l Supplies for DC power equipment
l Input rectifiers for PWM inverter
l Battery DC power supplies
l Field supply for DC motors
Advantages
l Easy to mount
l Space and weight savings
M4 screws (4x)
supplied
Symbol
Test Conditions
Characteristic Values
IR
VF
VT0
r
T
RthJC
RthCH
VR = VRRM;
VR = VRRM;
TVJ = 25°C
TVJ = TVJM
IF = 20 A;
TVJ = 25°C
For power-loss calculations only
T =T
VJ VJM
per diode; DC current
per module
per diode, DC current
per module
0.3 mA
5 mA
1.15 V
0.80 V
13 m
1.7 K/W
0.42 K/W
typ. 0.3 K/W
typ. 0.08 K/W
d Creeping distance on surface
S
dA Creepage distance in air ®
a Max. allowable acceleration
Data according to IEC 60747 and refer to a single diode unless otherwise stated
¬ for resistive load at bridge output
8 mm
4 mm
50 m/s2
F4 - 14
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min. Max.
31.50
7.80
31.88
8.20
4.09
4.09
4.29
4.29
4.09
14.91
4.29
15.11
30.12
37.80
30.30
38.30
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.72
4.42
4.85
24.59
-0.05
25.07
0.1
3.30
0.780
4.57
0.830
Inches
Min. Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.489
1.193
1.509
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
0.130
19.81
0.180
21.08
© 2000 IXYS All rights reserved

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VBO 40
80
A
70
IF 60
50
40
30
TVJ=125°C
TVJ= 25°C
250
50Hz, 80% VRRM
A
IFSM200
TVJ = 45°C
150
100
20 TVJ = 150°C
50
10
0
0.0 0.5 1.0 1.5 V 2.0
VF
Fig. 1 Forward current versus voltage
drop per diode
200
W
160
Ptot
120
80
0
0.001
0.01
0.1 s
t
Fig. 2 Surge overload current
1
RthHA :
0.1 K/W
0.5 K/W
1.0 K/W
2.0 K/W
4.0 K/W
7.0 K/W
103
VR = 0 V
A2s
I2t
TVJ = 45°C
102
TVJ = 150°C
101
1
2 3 4 5 6 7 8ms910
t
Fig. 3 I2t versus time per diode
50
A
40
Id(AV)M
30
20
40 10
0
0 10 20 30 40 50 60 A 0 20 40 60 80 100 120 140 °C
Id(AV)M
Tamb
Fig. 4 Power dissipation versus direct output current and ambient temperature
2.0
K/W
1.6
ZthJC
0
0 20 40 60 80 100 120 140 °C
TC
Fig. 5 Max. forward current versus case
temperature
1.2
0.8
0.4
0.0
0.001
0.01
0.1
Fig. 6 Transient thermal impedance junction to case
Constants for ZthJC calculation:
i
VBO 40
1
2
3
4
5
1 s 10
t
Rthi (K/W)
0.081
0.1449
0.2982
0.735
0.441
ti (s)
0.00024
0.0036
0.0235
0.142
0.7
© 2000 IXYS All rights reserved
F4- 15