VBO105-08NO7.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 VBO105-08NO7 데이타시트 다운로드

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Standard Rectifier Module
1~ Rectifier Bridge
Part number
VBO105-08NO7
VBO105-08NO7
13~
Rectifier
VRRM =
I DAV =
I FSM =
800 V
100 A
1500 A
-
~~
+
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For one phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: PWS-C
Industry standard outline
RoHS compliant
Easy to mount with two screws
Base plate: Copper
internally DCB isolated
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130612d

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Rectifier
Symbol
VRSM
VRRM
IR
VF
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 800 V
VR = 800 V
forward voltage drop
IF = 40 A
IF = 80 A
IF = 40 A
IF = 80 A
bridge output current
TC = 100°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
VBO105-08NO7
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
Ratings
min. typ. max.
900
800
100
2
1.09
1.24
1.00
1.19
100
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.30
58
0.78 V
4.8 m
0.8 K/W
K/W
155 W
1.50 kA
1.62 kA
1.28 kA
1.38 kA
11.3 kA²s
10.9 kA²s
8.13 kA²s
7.87 kA²s
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130612d

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VBO105-08NO7
Package PWS-C
Symbol Definition
I RMS
Tstg
T VJ
Weight
RMS current
storage temperature
virtual junction temperature
Conditions
per terminal
MD
M
T
d Spp/App
d Spb/Apb
V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; IISOL 1 mA
Ratings
min. typ. max.
150
-40 125
-40 150
237
4.25 5.75
4.25 5.75
26.0
14.0
3000
2500
Unit
A
°C
°C
g
Nm
Nm
mm
mm
V
V
Product
Number
Made in Germany
Circuit
Diagram
XXXX-XXXX YYCW Lot#
Date Code
Ordering
Standard
Part Number
VBO105-08NO7
Marking on Product
VBO105-08NO7
Delivery Mode
Box
Quantity Code No.
10 475769
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max
R0 max
threshold voltage
slope resistance *
0.78
3.6
* on die level
T VJ = 150 °C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130612d

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Outlines PWS-C
VBO105-08NO7
-
~~
+
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130612d

No Preview Available !

VBO105-08NO7
Rectifier
200
160
IF 120
[A] 80
TVJ =
125°C
40 150°C
TVJ = 25°C
0
0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
1200
1100
1000
IFSM
900
[A]
800
700
50 Hz
0.8 x V RRM
TVJ = 45°C
TVJ = 150°C
12000
VR = 0 V
10000
I2t
8000
[A2s]
6000
4000
TVJ = 45°C
TVJ = 150°C
600
10-3
10-2
10-1
100
t [s]
Fig. 2 Surge overload current
vs. time per diode
2000
1
t [ms]
10
Fig. 3 I2t versus time per diode
50
40
Ptot 30
DC =
1
0.5
0.4
0.33
0.17
0.08
[W]
20
RthJA:
0.2 KW
0.4 KW
0.6 KW
0.8 KW
1.0 KW
2.0 KW
10
0
0 10 20 30 40 50 0
IF(AV)M [A]
25 50 75 100 125 150
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
140
120
100
IF(AV)M
80
[A]
60
DC =
1
0.5
0.4
0.33
0.17
0.08
40
20
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
0.8
0.6
ZthJC
0.4
[K/W]
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 0.100
2 0.014
3 0.192
4 0.281
5 0.213
ti (s)
0.020
0.010
0.225
0.800
0.580
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130612d