VBO160-18NO7.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 VBO160-18NO7 데이타시트 다운로드

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Standard Rectifier Module
1~ Rectifier Bridge
Part number
VBO160-18NO7
VBO160-18NO7
13~
Rectifier
VRRM =
I DAV =
I FSM =
1800 V
160 A
2800 A
-
~~
+
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For one phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: PWS-E
Industry standard outline
RoHS compliant
Easy to mount with two screws
Base plate: Copper
internally DCB isolated
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130425a

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Rectifier
Symbol
VRSM
VRRM
IR
VF
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 1800 V
VR = 1800 V
forward voltage drop
IF = 160 A
IF = 320 A
IF = 160 A
IF = 320 A
bridge output current
TC = 110°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
VBO160-18NO7
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
Ratings
min. typ. max.
1900
1800
200
3.5
1.07
1.22
0.96
1.15
160
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.74 V
2.4 m
0.4 K/W
0.15 K/W
310 W
2.80 kA
3.03 kA
2.38 kA
2.57 kA
39.2 kA²s
38.1 kA²s
28.3 kA²s
27.5 kA²s
133 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130425a

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VBO160-18NO7
Package PWS-E
Symbol Definition
I RMS
Tstg
T VJ
Weight
RMS current
storage temperature
virtual junction temperature
Conditions
per terminal
MD
M
T
d Spp/App
d Spb/Apb
V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; IISOL 1 mA
Ratings
min. typ. max.
250
-40 125
-40 150
273
4.25 5.75
4.25 5.75
12.0
26.0
3000
2500
Unit
A
°C
°C
g
Nm
Nm
mm
mm
V
V
Product
Number
Made in Germany
Circuit
Diagram
XXXX-XXXX YYCW Lot#
Date Code
Ordering
Standard
Part Number
VBO160-18NO7
Marking on Product
VBO160-18NO7
Delivery Mode
Box
Quantity Code No.
5 484024
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max
R0 max
threshold voltage
slope resistance *
0.74
1.2
* on die level
T VJ = 150 °C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130425a

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Outlines PWS-E
VBO160-18NO7
M6x12
94
80
72
26 26
2.8 x 0.8
M6
C~
A+
3
2
1
B-
E~
4
5
6
12
25
66
7
-
~~
+
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130425a

No Preview Available !

VBO160-18NO7
Rectifier
240
200
2500
50Hz, 80% VRRM
160
IF 120
[A] 80
40 TVJ = 150°C
TVJ = 125°C
0
0.5
TVJ = 25°C
1.0 1.5
VF [V]
Fig. 1 Forward current vs.
voltage drop per diode
2000
IFSM
[A]
1500
TVJ = 45°C
TVJ = 150°C
1000
0.001
0.01 0.1
t [s]
1
Fig. 2 Surge overload current
vs. time per diode
105
50 Hz
0.8 x V RRM
104
[A2s]
TVJ= 45°C
TVJ= 150°C
103
1
2 3 4 5 6 789
t [ms]
Fig. 3 I2t vs. time per diode
100
80
60
Ptot
40
[W]
DC =
1
0.5
0.4
0.33
0.17
0.08
20
RthA:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
0
0 20 40 60 80 100 0 25 50 75 100 125 150 175
IdAVM [A]
Tamb [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
1
280
240
200
IdAV
160
[A] 120
DC =
1
0.5
0.4
0.33
0.17
0.08
80
40
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
0.1
ZthJC
[K/W]
0.01
0.001
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Ri
0.050
0.003
0.100
0.177
0.070
ti
0.02
0.01
0.225
0.8
0.58
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130425a