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WESTCODE
Date:- 13 Feb, 2002
Data Sheet Issue:- 1
Phase Control Thyristor
Types N0634LC380 to N0634LC420
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
3800-4200
3800-4200
3800-4200
3900-4300
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current. Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
634
451
288
1228
1123
7000
7700
245×103
296×103
200
400
5
4
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types N0634LC380 to N0634LC420 Issue 1.
Page 1 of 10
February, 2002

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Characteristics
N0634LC380 to N0634LC420
PARAMETER
VTM
V0
rS
dv/dt
IDRM
IRRM
VGT
IGT
IH
tgd
tgt
Qrr
Qra
Irm
trr
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
tq Turn-off time
Rth(j-hs) Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
0.5
2.0
1450
850
90
19
450
600
-
-
-
340
2.8 ITM=1100A
1.1
1.5
- VD=80% VDRM, linear ramp, Gate O/C
100 Rated VDRM
100 Rated VRRM
3.0
Tj=25°C, VD=10V, IT=2A
300
1000 Tj=25°C
1.0 VD=67%VDRM, ITM=1000A, di/dt=10A/µs,
3.0 IFG=2A, tr=0.5µs, Tj=25°C
-
1200 ITM=1000A, tp=1000µs, di/dt=10A/µs,
- Vr=50V
-
750
1000
0.032
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
Double side cooled
0.064 Single side cooled
20
-
UNITS
V
V
m
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes: -
1) Unless otherwise indicated Tj=125°C.
Data Sheet. Types N0634LC380 to N0634LC420 Issue 1.
Page 2 of 10
February, 2002

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N0634LC380 to N0634LC420
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
38
40
42
VDRM VDSM VRRM
V
3800
4000
4200
VRSM
V
3900
4100
4300
VD VR
DC V
1950
2000
2040
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
6.0 Gate Drive
The recommended pulse gate drive is 30V, 15with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The pulse duration may need to be configured according to the application but should be no shorter than
20µs, otherwise an increase in pulse current may be needed to supply the necessary charge to trigger.
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
I AV = −V0 +
V02 + 4 ff rs WAV
2 ff rs
Where V0=1.1V, rs=1.5mΩ,
and:
WAV
=
T
Rth
T = Tj max THs
Rth = Supplementary thermal impedance, see table below.
ff = Form factor, see table below.
Conduction Angle
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Supplementary Thermal Impedance
30°
0.0511
0.0845
0.0456
0.0774
60°
0.0455
0.0781
0.0397
0.0714
90°
0.0418
0.0743
0.0369
0.0689
120°
0.0393
0.0719
0.035
0.0674
180°
0.0362
0.0689
0.033
0.0652
270°
0.0336
0.0663
d.c.
0.032
0.064
Conduction Angle
Square wave
Sine wave
30°
3.46
3.98
Form Factors
60° 90°
2.45 2
2.78 2.22
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
Data Sheet. Types N0634LC380 to N0634LC420 Issue 1.
Page 3 of 10
February, 2002