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Date:- 6th December, 2012
Data Sheet Issue:- A1
Phase Control Thyristor
Types N0795YN100 to N0795YN180
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)M
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
(continuous, 50Hz)
Critical rate of rise of on-state current (note 6) (repetitive, 50Hz, 60s)
(non-repetitive)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Anode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr0.5µs, Tcase=125°C.
Data Sheet. Types N0795YN100 to N0795YN180 Issue A1
Page 1 of 12
MAXIMUM
LIMITS
1000-1800
1100-1900
1000-1800
1100-1900
MAXIMUM
LIMITS
795
540
300
1580
1340
9450
10500
444×103
551×103
250
500
1000
5
3
30
-60 to +125
-60 to +125
UNITS
V
V
V
V
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
V
W
W
°C
°C
December, 2012

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Characteristics
Phase Control Thyristor Types N0795YN100 to N0795YN180
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate-controlled turn-on delay time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irr Reverse recovery current
trr Reverse recovery time
tq Turn-off time
RthJK Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9.0
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
- 1.30 ITM=785A
- 2.00 ITM=2350A
- 0.95
V
V
V
- 0.45
m
- - VD=67% VDRM, linear ramp, gate o/c
- 30 Rated VDRM
- 30 Rated VRRM
- 2.50
Tj=25°C
- 150
VD=10V, IT=3A
V/µs
mA
mA
V
mA
- 0.25 Rated VDRM
- 300 Tj=25°C
-
2.0
VD=67% VDRM, IT=2000A, di/dt=10A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
- 850
V
mA
µs
µC
- 750
µC
ITM=500A, tp=500µs, di/dt=10A/µs, Vr=100V
- 100
A
- 15
µs
-
125
ITM=500A, tp=500µs, di/dt=10A/µs, Vr=50V,
Vdr=67%VDRM, dVdr/dt=50V/µs
µs
- 0.048 Double side cooled
K/W
- 0.104 Anode side cooled
- 0.088 Cathode side cooled
K/W
- 11.0 Note 2.
kN
110 -
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) For other clamp forces, please consult factory.
Data Sheet. Types N0795YN100 to N0795YN180 Issue A1
Page 2 of 12
December, 2012

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Phase Control Thyristor Types N0795YN100 to N0795YN180
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
10
12
14
16
18
VDRM VRRM
V
1000
1200
1400
1600
1800
VDSM VRSM
V
1100
1300
1500
1700
1900
VD VR
DC V
750
900
1050
1200
1350
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
tp1
IG
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types N0795YN100 to N0795YN180 Issue A1
Page 3 of 12
December, 2012