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WESTCODE
An IXYS Company
Date:- 1 Aug, 2008
Data Sheet Issue:- 2
Phase Control Thyristor
Types N1314NC300 to N1314NC360
Old Type No.: N570CH24-36
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
3000-3600
3000-3600
3000-3600
3100-3700
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current. Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=3000A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
1314
914
564
2576
2278
16.6
18.3
1.38×106
1.67×106
150
300
5
4
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types N1314NC300 to N1314NC360 Issue 2
Page 1 of 10
August, 2008

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WESTCODE An IXYS Company
Characteristics
Phase Control Thyristor types N1314NC300 to N1314NC360
VTM
V0
rS
dv/dt
IDRM
IRRM
VGT
IGT
IH
tgd
tgt
Qrr
Qra
Irm
trr
PARAMETER
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
tq Turn-off time
Rth(j-hs) Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
19
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
0.8
1.3
4100
2400
155
31
600
900
-
-
-
510
2.11 ITM=2550A
1.00
0.437
- VD=80% VDRM, linear ramp, Gate O/C
100 Rated VDRM
100 Rated VRRM
3.0
300 Tj=25°C, VD=10V, IT=3A
1000 Tj=25°C
1.5 VD=80%VDRM, ITM=2000A, di/dt=10A/µs,
2.5 IFG=2A, tr=0.5µs, Tj=25°C
4900
- ITM=1000A, tp=1000µs, di/dt=10A/µs,
- Vr=50V
-
-
-
0.022
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
Double side cooled
0.044 Single side cooled
26
-
Notes: -
1) Unless otherwise indicated Tj=125°C.
UNITS
V
V
m
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Data Sheet. Types N1314NC300 to N1314NC360 Issue 2
Page 2 of 10
August, 2008

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Phase Control Thyristor types N1314NC300 to N1314NC360
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
30
32
34
36
VDRM VDSM VRRM
V
3000
3200
3400
3600
VRSM
V
3100
3300
3500
3700
VD VR
DC V
1750
1800
1850
1900
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
6.0 Gate Drive
The recommended pulse gate drive is 30V, 15with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The pulse duration may need to be configured according to the application but should be no shorter than
20µs, otherwise an increase in pulse current may be needed to supply the necessary charge to trigger.
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
I AV = −V0 +
V02 + 4 ff rs WAV
2 ff rs
and:
WAV
=
T
Rth
T = Tj max THs
Where V0=1.0V, rs=0.437mΩ,
Rth = Supplementary thermal impedance, see table below.
ff = Form factor, see table below.
Conduction Angle
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Supplementary Thermal Impedance
30° 60° 90° 120°
0.0298
0.0518
0.028
0.0505
0.0279
0.0503
0.0258
0.0488
0.0265
0.0491
0.0246
0.0477
0.0254
0.0482
0.0238
0.0468
180°
0.024
0.0468
0.0224
0.0449
270°
0.0227
0.0454
d.c.
0.022
0.044
Conduction Angle
Square wave
Sine wave
30°
3.46
3.98
Form Factors
60° 90°
2.45 2
2.78 2.22
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
Data Sheet. Types N1314NC300 to N1314NC360 Issue 2
Page 3 of 10
August, 2008