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Date:- 22 August, 2014
Data Sheet Issue: A1
Advance Data
High Power Sonic FRD
Type E0660NC45C & E0600NH45C
Absolute Maximum Ratings
VOLTAGE RATINGS
VRRM
VRSM
VR(d.c.)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
Maximum reverse d.c. voltage (note 1)
MAXIMUM
LIMITS
4500
4600
2800
UNITS
V
V
V
OTHER RATINGS (note 6)
IF(AV)M
IF(AV)M
IF(AV)M
IF(RMS)
IF(d.c.)
IFSM
IFSM2
I2t
I2t
Prr
Tj op
Tstg
Mean forward current, Tsink=55°C, (note 2)
Mean forward current. Tsink=100°C, (note 2)
Mean forward current. Tsink=100°C, (note 3)
Nominal RMS forward current, Tsink=25°C, (note 2)
D.C. forward current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum non-repetitive peak reverse recovery power, (note 7)
Operating temperature range
Storage temperature range
MAXIMUM
LIMITS
765
515
330
1410
1285
7318
8050
268×103
324×103
3
-40 to +150
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
MW
°C
°C
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 150°C Tj initial.
6) Current (IF) ratings have been calculated using VT0 and rT (see page 2)
7) Tj=Tjop, IF=660A, di/dt=1500A/µs Vr=2800V and Ls=200nH. Test circuit and sample waveform are shown in
diagram 1. IGBT type T0800TB45E used as switch.
Provisional Data Sheet. Type E0660NC45C & E0660NH45C Issue A1
Page 1 of 11
August, 2014

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Characteristics
High Power Sonic FRD Type E0660NC45C & E0660NH45C
PARAMETER
VFM Maximum peak forward voltage
VT0 Threshold voltage
rT Slope resistance
VT01 Threshold voltage
rT1 Slope resistance
VFRM Maximum forward recovery voltage
IRRM Peak reverse current
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time, 50% Chord
Erm Reverse recovery loss, 50% Chord
R
thJK
Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
-
TYP.
3.5
-
-
-
-
-
-
-
-
-
960
430
600
1.5
1750
-
-
-
MAX. TEST CONDITIONS (Note 1)
3.7 IFM=660A
5.24 IFM=1320A
2.0
Current range 763A - 2289A (Note 2)
2.236
2.3
Current range 660A - 1980A
2.13
230 di/dt = 3000A/µs
450 di/dt = 3000A/µs, Tj=25°C
40 Rated VRRM
5 Rated VRRM, Tj=25°C
1100
-
690
IFM=660A, tp=1ms, di/dt=1000A/µs,
Vr=2800V, 50% Chord. (note 3)
-
2000
0.02 Double side cooled
0.04 Single side cooled
25 (Note 4)
510 -
UNITS
V
V
m
V
m
V
mA
µC
µC
A
µs
J
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=150°C.
2) VT0 and rT were used to calculate the current ratings illustrated on page one.
3) Figures 3-7 were compiled using these conditions. Test circuit and sample waveform are shown in
diagram 1.
4) For clamp forces outside these limits, please consult factory.
Provisional Data Sheet. Type E0660NC45C & E0660NH45C Issue A1
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High Power Sonic FRD Type E0660NC45C & E0660NH45C
Additional information on Ratings and Characteristics
1.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
2.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients
of the expression for the forward characteristic given below:
VF = A + B ln(I F ) + C I F + D I F
where IF = instantaneous forward current.
3.0 Reverse recovery ratings
Diagram 1 – Reverse Recovery test circuit and sample waveform
LS
IG
D.U.T
(i) Qra is based on 50% Irm chord as shown in Figure below.
(ii) Qrr is based on a 150µs integration time.
150 µs
I.e. Qrr = irr .dt
0
(iii)
K Factor = t1
t2
Provisional Data Sheet. Type E0660NC45C & E0660NH45C Issue A1
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High Power Sonic FRD Type E0660NC45C & E0660NH45C
4.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
[ ]TSINK = TJ (MAX ) E k + f Rth(J Hs)
Where k = 0.2314 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = Rated frequency in Hz at the original sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W(tot ) = W(original ) + E f
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
R2
=
4
Cs
Vr
di dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
I AV = − VT 0 +
VT 02 + 4 ff 2 rT WAV
2 ff 2 rT
Where VT0 =2V, rT =2.236m
Provisional Data Sheet. Type E0660NC45C & E0660NH45C Issue A1
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High Power Sonic FRD Type E0660NC45C & E0660NH45C
ff = form factor (normally unity for fast diode applications)
WAV
=
T
Rth
T = Tj(MAX ) TK
5.2 Calculation of VF using ABCD Coefficients
The forward characteristic IF Vs VF, on page 6 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, and D forming the coefficients of the representative equation for VF in
terms of IF given below:
VF = A + B ln(I F ) + C IF + D I F
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics. The resulting values for VF agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
150°C Coefficients
A 0.44431
0.7966087
B 0.2496635
C 1.151255×10-3
-0.08276933
4.507968×10-4
D 0.03918113
0.1223788
Provisional Data Sheet. Type E0660NC45C & E0660NH45C Issue A1
Page 5 of 11
August, 2014