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WESTCODE
Date:- 18 Dec, 2001
Data Sheet Issue:- 1
Phase Control Thyristor
Types N0882NC400 to N0882NC450
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
4000-4500
4000-4500
4000-4500
4100-4600
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current. Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=500A, IFG=1A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
882
616
383
1724
1536
7700
8470
296×103
359×103
150
300
5
4
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types N0882NC400 to N0882NC450 Issue 1.
Page 1 of 10
December, 2001

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Characteristics
N0882NC400 to N0882NC450
PARAMETER
VTM
V0
rS
dv/dt
IDRM
IRRM
VGT
IGT
IH
tgd
tgt
Qrr
Qra
Irm
trr
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
tq Turn-off time
Rth(j-hs) Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
19
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
0.6
2.8
4700
1700
100
30
700
1075
-
-
-
510
2.98 ITM=1830A
1.30
0.92
- VD=80% VDRM, linear ramp, gate o/c
100 Rated VDRM
100 Rated VRRM
3.0
Tj=25°C, VD=10V, IT=2A
300
1.0 Tj=25°C
1.4 VD=80%VDRM, ITM=1000A, di/dt=10A/µs,
4.0 IFG=2A, tr=0.5µs, Tj=25°C
-
2200 ITM=1000A, tp=1000µs, di/dt=10A/µs,
- Vr=50V
-
850
1200
0.024
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
Double side cooled
0.048 Single side cooled
26
-
UNITS
V
V
m
V/µs
mA
mA
V
mA
A
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes: -
1) Unless otherwise indicated Tj=125°C.
Data Sheet. Types N0882NC400 to N0882NC450 Issue 1.
Page 2 of 10
December, 2001

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WESTCODE Positive development in power electronics
N0882NC400 to N0882NC450
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
40
42
44
45
VDRM VDSM VRRM
V
4000
4200
4400
4500
VRSM
V
4100
4300
4500
4600
VD VR
DC V
2000
2040
2080
2100
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
6.0 Gate Drive
The recommended pulse gate drive is 30V, 30with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The pulse duration may need to be configured according to the application but should be no shorter than
20µs, otherwise an increase in pulse current may be needed to supply the necessary charge to trigger.
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
I AV = − V0 +
V0 2 + 4 ff 2 rs WAV
2 ff 2 rs
and:
Where V0=1.30V, rs=0.92mΩ,
Rth = Supplementary thermal impedance, see table below.
ff = Form factor, see table below.
WAV
=
T
Rth
T = Tj max THs
Conduction Angle
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Supplementary Thermal Impedance
30°
0.03047
0.05823
0.0303
0.05588
60°
0.03035
0.0577
0.0275
0.05323
90°
0.02857
0.05408
0.0262
0.05186
120°
0.02733
0.05286
0.02524
0.05089
180°
0.02569
0.05121
0.024
0.048
270°
0.0242
0.0497
d.c.
0.024
0.048
Conduction Angle
Square wave
Sine wave
Form Factors
30° 60° 90°
3.46 2.45
2
3.98 2.78 2.22
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
Data Sheet. Types N0882NC400 to N0882NC450 Issue 1.
Page 3 of 10
December, 2001