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Date:- 8 August 2012
Data Sheet Issue:- 3
Phase Control Thyristor
Types N0910LC200 to N0910LC260
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
OTHER RATINGS
IT(AVM)
IT(AVM)
IT(AVM)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
TS
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
2000-2600
2000-2600
2000-2600
2100-2700
UNITS
V
V
V
V
MAXIMUM
LIMITS
910
630
386
1788
1569
9.2
10.1
423×103
510×103
300
600
10
4
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Types N0910LC200 to N0910LC260 Issue 3
Page 1 of 11
August, 2012

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Characteristics
Phase Control Thyristor Types N0910LC200 to N0910LC260
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate-controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irr Reverse recovery current
trr Reverse recovery time
tq Turn-off time
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
-
0.5
1.0
2400
1250
100
25.0
600
1000
-
-
-
340
2.07 ITM=1700A
1.04
0.606
- VD=80% VDRM, linear ramp, gate o/c
60 Rated VDRM
60 Rated VRRM
3.0
Tj=25°C
300
VD=10V, IT=3A
0.25
1000
1.0
2.0
Rated VDRM
Tj=25°C
VD=67% VDRM, IT=1000A, di/dt=10A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
-
1500 ITM=1000A, tp=1000µs, di/dt=10A/µs,
- Vr=50V
-
-
-
0.032
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
Double side cooled
0.064 Single side cooled
20
-
UNITS
V
V
m
V/µs
mA
mA
V
mA
V
mA
µs
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
Data Sheet. Types N0910LC200 to N0910LC260 Issue 3
Page 2 of 11
August, 2012

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Phase Control Thyristor Types N0910LC200 to N0910LC260
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
20
22
24
26
VDRM VDSM VRRM
V
2000
2200
2400
2600
VRSM
V
2100
2300
2500
2700
VD VR
DC V
1250
1350
1450
1550
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 300A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
tp1
IG
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types N0910LC200 to N0910LC260 Issue 3
Page 3 of 11
August, 2012