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Date:- 2 Jan, 2002
Data Sheet Issue:- 1
Phase Control Thyristor
Types N1351VC400 to N1351VC450
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
4000-4500
4000-4500
4000-4500
4100-4600
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current. Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
1351
944
587
2641
2352
17500
20000
1.53×106
2.00×106
150
300
5
4
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types N1351VC400 to N1351VC450 Issue 1.
Page 1 of 10
January, 2002

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Characteristics
N1351VC400 to N1351VC450
PARAMETER
VTM
V0
rS
dv/dt
IDRM
IRRM
VGT
IGT
IH
tgd
tgt
Qrr
Qra
Irm
trr
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
tq Turn-off time
Rth(j-hs) Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
27
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
0.7
1.5
1500
900
90
14.0
350
600
-
-
-
1.0
3.0 ITM=3220A
1.20
0.553
- VD=80% VDRM, linear ramp, Gate O/C
150 Rated VDRM
150 Rated VRRM
3.0
Tj=25°C, VD=10V, IT=3A
300
1000 Tj=25°C
1.0 VD=67%VDRM, ITM=1000A, di/dt=10A/µs,
2.0 IFG=2A, tr=0.5µs, Tj=25°C
-
1200 ITM=1000A, tp=1000µs, di/dt=10A/µs,
- Vr=50V
-
-
-
0.017
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
Double side cooled
0.034 Single side cooled
34
-
UNITS
V
V
m
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
kg
Notes: -
1) Unless otherwise indicated Tj=125°C.
Data Sheet. Types N1351VC400 to N1351VC450 Issue 1.
Page 2 of 10
January, 2002

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N1351VC400 to N1351VC450
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
40
42
44
45
VDRM VDSM VRRM
V
4000
4200
4400
4500
VRSM
V
4100
4300
4500
4600
VD VR
DC V
2000
2040
2080
2100
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
6.0 Gate Drive
The recommended pulse gate drive is 30V, 15with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The pulse duration may need to be configured according to the application but should be no shorter than
20µs, otherwise an increase in pulse current may be needed to supply the necessary charge to trigger.
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
I AV = − V0 +
V0 2 + 4 ff 2 rs WAV
2 ff 2 rs
and:
Where V0=1.20V, rs=0.553mΩ,
Rth = Supplementary thermal impedance, see table below.
ff = Form factor, see table below.
WAV
=
T
Rth
T = Tj max THs
Conduction Angle
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Supplementary Thermal Impedance
30°
0.027
0.0464
0.0233
0.042
60°
0.0237
0.0428
0.0203
0.039
90°
0.0218
0.0408
0.0191
0.0377
120°
0.0206
0.0395
0.0183
0.037
180°
0.0192
0.038
0.017
0.0355
270°
0.0179
0.0368
d.c.
0.017
0.034
Conduction Angle
Square wave
Sine wave
30°
3.46
3.98
Form Factors
60° 90°
2.45 2
2.78 2.22
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
Data Sheet. Types N1351VC400 to N1351VC450 Issue 1.
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January, 2002

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N1351VC400 to N1351VC450
7.2 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 5 is represented in two ways;
(i) the well established V0 and rs tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ln(IT )+ C IT + D IT
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for VT agree with the true device characteristic over a current range, which is limited to
that plotted.
125°C Coefficients
A 2.195803659
B -0.395248246
C 8.092×10-5
D 6.58800679×10-2
7.3 D.C. Thermal Impedance Calculation
rt
=
p=n
rp
p =1
1
t
eτ p


Where p = 1 to n, n is the number of terms in the series and:
t =Duration of heating pulse in
seconds.
r
t
=Thermal resistance at time t.
rp =Amplitude of pth term.
τp =Time Constant of rth term.
Term
rp
τp
1
8.74×10-3
1.328
D.C. Double Side Cooled
2
4.03×10-3
3
2.09×10-3
0.182
0.0601
4
1.38×10-3
8.05×10-3
5
0.981×10-3
1.31×10-3
Term
rp
τp
1
0.0204
9.876
D.C. Single Side Cooled
2
5.29×10-3
3
7.04×10-3
4.968
0.258
8.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1.
(ii) Qrr is based on a 150µs integration time.
150 µs
i.e. Qrr = irr .dt
0
(iii) K Factor = t1
t2
4
2.2×10-3
0.0137
5
1.11×10-3
1.33×10-3
Fig. 1
Data Sheet. Types N1351VC400 to N1351VC450 Issue 1.
Page 4 of 10
January, 2002

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Curves
Figure 1 - On-state characteristics of Limit device
10000
N1351VC400 to N1351VC450
Figure 2 - Transient Thermal Impedance
0.1
N1351VC400-450
Issue 1
SSC
0.034K/W
Tj = 125°C
0.01
DSC
0.017K/W
1000
0.001
0.0001
100
0
N1351VC400-450
Issue 1
12345
Instantaneous On-state voltage - VTM (V)
6
Figure 3 - Gate Characteristics - Trigger Limits
7
N1351VC400-450
Issue 1
Tj=25°C
6
5
Max VG dc
4
IGT, VGT
3
2
1
IGD, VGD
0
0
Min VG dc
0.2 0.4 0.6
Gate Current - IG (A)
0.8
0.00001
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Time (s)
Figure 4 - Gate Characteristics - Power Curves
25
N1351VC400-450
Issue 1
Tj=25°C
20
Max VG dc
15
10
PG Max 30W dc
PG 4W dc
5
Min VG dc
0
0 2 4 6 8 10
Gate Current - IG (A)
Data Sheet. Types N1351VC400 to N1351VC450 Issue 1.
Page 5 of 10
January, 2002