R0633YC10F pdf, R0633YC10F 데이터시트, R0633YC10F 데이타시트

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Date:- 14 Jul, 2015

Data Sheet Issue:- 4

Distributed Gate Thyristor

Types R0633YC10x to R0633YC12x

Absolute Maximum Ratings

VDRM

VDSM

VRRM

VRSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

MAXIMUM

LIMITS

1200

1300

UNITS

IT(AV)

IT(RMS)

IT(d.c.)

ITSM

ITSM2

I2t

diT/dt

VRGM

PG(AV)

PGM

VGD

THS

Tstg

OTHER RATINGS

Mean on-state current, Tsink=55°C, (note 2)

Mean on-state current. Tsink=85°C, (note 2)

Mean on-state current. Tsink=85°C, (note 3)

Nominal RMS on-state current, Tsink=25°C, (note 2)

D.C. on-state current, Tsink=25°C, (note 4)

Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)

Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)

I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)

I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)

Maximum rate of rise of on-state current (repetitive), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage, (Note 7)

Operating temperature range

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C Tj initial.

6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.

7) Rated VDRM.

MAXIMUM

LIMITS

633

423

246

1268

1054

6.3

6.9

200×103

240×103

500

1000

0.25

-40 to +125

-40 to +150

UNITS

A2s

A/µs

°C

Data Sheet. Type R0633YC12x Issue 4

Page 1 of 12

July, 2015

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Characteristics

Distributed Gate Thyristor R0633YC12x

PARAMETER

VTM

dv/dt

Maximum peak on-state voltage

Threshold voltage

Slope resistance

Critical rate of rise of off-state voltage

IDRM Peak off-state current

IRRM Peak reverse current

VGT Gate trigger voltage

IGT Gate trigger current

IH Holding current

Qrr Recovered charge

Qra Recovered charge, 50% Chord

Irm Reverse recovery current

trr Reverse recovery time

tq Turn-off time

Rth(j-hs) Thermal resistance, junction to heatsink

F Mounting force

Wt Weight

MIN.

200

5.5

TYP. MAX. TEST CONDITIONS (Note 1)

UNITS

125

2.25

1.85 ITM=1000A

1.25

0.614

3.0

200

1000

VD=80% VDRM, linear ramp

Rated VDRM

Rated VRRM

Tj=25°C

VD=10V, IT=3A

Tj=25°C

100

ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V

0.050

ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,

Vdr=80%VDRM, dVdr/dt=20V/µs

ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,

Vdr=80%VDRM, dVdr/dt=200V/µs

Double side cooled

0.10 Single side cooled

mΩ

V/µs

µC

µs

K/W

Notes:-

1) Unless otherwise indicated Tj=125°C.

2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for

details of tq codes.

Introduction

The R0633 Distributed Gate thyristor has fast switching characteristics provided by a regenerative,

interdigitated gate. It also exhibits low switching losses and is therefore suitable for medium current,

medium frequency applications.

Data Sheet. Type R0633YC12x Issue 4

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Distributed Gate Thyristor R0633YC12x

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

VDRM VDSM VRRM

1200

VRSM

1300

VD VR

DC V

810

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25oC.

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not

exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

7.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(tq) and for the off-state voltage to reach full value (tv), i.e.

f max =

tpulse + tq + tv

Data Sheet. Type R0633YC12x Issue 4

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Distributed Gate Thyristor R0633YC12x

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.

Let Ep be the Energy per pulse for a given current and pulse width, in joules

Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)

and TSINK be the heat sink temperature.

Then the average dissipation will be:

( )WAV = EP ⋅ f and TSINK (max.) = 125 − WAV ⋅ Rth(J −Hs)

11.0 Reverse recovery ratings

(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.

Fig. 1

(ii) Qrr is based on a 150µs integration time.

150 µs

∫i.e. Qrr = irr .dt

(iii)

K Factor = t1

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and

reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be

constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can

then be evaluated from:

( )TSINK (new) = TSINK (original ) − E ⋅ k + f ⋅ Rth(J −Hs )

where k = 0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.

Rth(J-Hs) = d.c. thermal resistance (°C/W).

Data Sheet. Type R0633YC12x Issue 4

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Distributed Gate Thyristor R0633YC12x

The total dissipation is now given by:

W(TOT) = W (original) + E ⋅ f

12.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design

purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).

Let f be the operating frequency in Hz

( )TSINK (new) = TSINK (original ) − E ⋅ Rth ⋅ f

Where TSINK (new) is the required maximum heat sink temperature and

TSINK (original) is the heat sink temperature given with the frequency ratings.

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage

to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than

67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value

obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement

This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

damped snubber, connected across diode anode to cathode. The formula used for the calculation

of this snubber is shown below:

R2 = 4 ⋅ Vr

⋅

Where: Vr = Commutating source voltage

CS = Snubber capacitance

R = Snubber resistance

13.0 Gate Drive

The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than

0.5µs. This gate drive must be applied when using the full di/dt capability of the device.

The duration of pulse may need to be configured with respect to the application but should be no shorter

than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in

charge to trigger.

Data Sheet. Type R0633YC12x Issue 4

Page 5 of 12

July, 2015