K0900ME650.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 K0900ME650 데이타시트 다운로드

No Preview Available !

Date:- 18th May, 2015
Data Sheet Issue:- P1
Medium Voltage Thyristor
Types K0900ME600 & K0900ME650
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
6000-6500
6000-6500
6000-6500
6100-6600
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current. Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=2000A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
1010
700
400
1980
1745
12.6
14.0
794×103
980×103
200
1000
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types K0900ME600 and K0900ME650 Issue P1.
Page 1 of 10
May, 2015

No Preview Available !

Characteristics
Medium Voltage Thyristor Types K0900ME600 and K0900ME650
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
dv/dt Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered Charge
Qra Recovered Charge, 50% chord
Irm Reverse recovery current
trr Reverse recovery time, 50% chord
tq Turn-off time
R Thermal resistance, junction to
thJK heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
600
850
-
-
-
24
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
-
-
-
-
-
-
-
-
-
0.6
1.6
6200
2750
150
37
-
-
-
-
-
-
730
2.50 ITM=1000A
1.61
0.90
- VD=80% VDRM, Linear ramp, gate o/c
150 Rated VDRM
150 Rated VRRM
3.0
Tj=25°C, VD=10V, IT=3A
300
1000
1.0
2.5
Tj=25°C
IFG=2A, tr=0.5µs, VD=67%VDRM,
ITM=1000A, di/dt=10A/µs, Tj=25°C
7000
- ITM=1000A, tp=2000µs, di/dt=10A/µs,
155 Vr=100V
-
850
1150
0.018
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=20V/µs
(Note 2)
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=200V/µs
(Note 2)
Double side cooled
0.040 Cathode side cooled
0.033 Anode side cooled
32 (Note 3)
-
V
V
m
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
K/W
kN
g
Notes: -
1) Unless otherwise stated Tj=125°C.
2) Standard test condition for tq dVdr/dt=20V/µs. For other dVdr/dt values please consult factory.
3) For other clamp forces please consult factory.
Data Sheet. Types K0900ME600 and K0900ME650 Issue P1.
Page 2 of 10
May, 2015

No Preview Available !

Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Medium Voltage Thyristor Types K0900ME600 and K0900ME650
Voltage Grade
60
65
VDRM VDSM VRRM
V
6000
6500
VRSM
V
6100
6600
VD VR
DC V
3320
3600
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
IAV = − V0 +
V0 + 4 ff rs WAV
2 ff rs
and:
WAV
=
T
Rth
T = T j max THs
Where VT0=1.61V, rT=0.90mΩ,
Rth = Supplementary thermal impedance, see table below.
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave Double Side Cooled
Square wave Anode Side Cooled
Square wave Cathode Side Cooled
Sine wave Double Side Cooled
Sine wave Anode Side Cooled
Sine wave Cathode Side Cooled
30°
0.0252
0.0395
0.0654
0.0224
0.0379
0.0457
60°
0.0227
0.0378
0.0534
0.0201
0.0361
0.0439
90°
0.0213
0.0366
0.0491
0.0192
0.0351
0.0428
120°
0.0204
0.0358
0.0467
0.0187
0.0344
0.0419
180°
0.0194
0.0347
0.0440
0.0177
0.0330
0.0401
270°
0.0186
0.0337
0.0416
d.c.
0.0180
0.0330
0.0400
Conduction Angle
Square wave
Sine wave
30°
3.46
3.98
Form Factors
60° 90°
2.45 2
2.78 2.22
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
Data Sheet. Types K0900ME600 and K0900ME650 Issue P1.
Page 3 of 10
May, 2015