Characteristics
Pulse Thyristor Type Y200CKC250
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
IL Latching current
IH Holding current
IGT Nominal gate trigger current
tgd Gate controlled turn-on delay time
tgt Turn-on time
RthJK Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
4.5
-
TYP. MAX. TEST CONDITIONS (Note 1)
- 10 IG=4A, ITM=4000A
- 1.216
- 2.196
- - VD=67% VDRM, Linear ramp, VGK=-2V
- 100 Rated VDRM
- 100 Rated VRRM
10 -
Tj=25°C
10 -
- 50 diG/dt=100A/µs, Tj=25°C
0.9 - VD=1500V, ITM=10kA, di/dt=2500A/µs,
1.0 - IFG=50A, diG/dt=100A/µs, Tj=25°C.
- 0.065 Double side cooled
- 0.090 Anode side cooled
- 0.240 Cathode side cooled
- 9.0
120 -
Notes:-
1) Unless otherwise indicated Tj=125°C.
UNITS
V
V
m
V/s
mA
mA
A
A
A
µs
K/W
K/W
K/W
kN
g
Data Sheet. Type Y200CKC250 Issue 2
Page 2 of 3
November 2014