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Date:- 6 August, 2012
Data Sheet Issue:- 2
Insulated Gate Bi-Polar Transistor
Type T0340VB45G
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
4500
2800
±20
UNITS
V
V
V
IC(DC)
ICRM
IF(DC)
IFRM
IFSM
IFSM2
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
Peak non-repetitive surge tp=10ms, VRM10V, Diode (Note 4)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
340
680
340
680
2060
2280
2.7
500
-40 to +125
-40 to +125
UNITS
A
A
A
A
A
A
kW
A/µs
°C
°C
Data Sheet T0340VB45G Issue 2
Page 1 of 7
August, 2012

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Insulated Gate Bi-polar Transistor Type T0340VB45G
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.75
3.50
-
-
5.2
10
-
60
3.7
3.2
6.5
2.9
2.2
2.6
10
1.4
1100
MAX
3.2
3.9
2.18
5.05
-
25
±7
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 340A, VGE = 15V, Tj = 25°C
IC = 340A, VGE = 15V
Current range: 340 – 1020A
VCE = VGE, IC = 35mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =340A, VCE =2800V, di/dt=500A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 18Ω, Rg(OFF)=20Ω, CGE=47nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3.3
3.45
-
-
220
500
3.2
0.4
MAX
3.6
3.8
2.88
2.72
-
-
-
-
TEST CONDITIONS
IF = 340A, Tj =25°C
IF = 340A
Current range 340-1020A
IF = 340A, VGE = -15V, di/dt=500A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
12
-
TYP
-
-
-
-
-
-
-
0.65
MAX
36.4
94.3
59.4
57.6
88.2
166
16
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
Data Sheet T0340VB45G Issue 2
Page 2 of 7
August, 2012

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Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
1000
T0340VB45G
Issue 2
VGE=+15V
25°C
125°C
Insulated Gate Bi-polar Transistor Type T0340VB45G
Figure 2 – Typical output characteristic
800
T0340VB45G
Issue 2
Tj =25°C
600
100
400
VGE = 20V
VGE = 17V
VGE = 15V
10
VGE = 13V
VGE = 11V
200
1
01234567
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 3 – Typical output characteristic
800
T0340VB45G
Issue 2
Tj=125°C
600
0
012345
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
20
VCE=2800V
VGE=±15V
CGE=47nF
Tj=125°C
T0340VB45G
Issue 2
340A
15
200A
400
200
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
10
5
0
01234567
Collector to emitter saturation voltage - VCE(sat) (V)
0
10 20 30 40 50 60 70 80 90
Gate resistance - RG(on) ()
Data Sheet T0340VB45G Issue 2
Page 3 of 7
August, 2012