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WESTCODE
An IXYS Company
Date:- 23 Aug, 2011
Data Sheet Issue:- P1
Prospective Data
Insulated Gate Bi-Polar Transistor
Type T0360NB25A
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
2500
1250
±20
UNITS
V
V
V
IC(DC)
ICRM
IF(DC)
IFRM
IFSM
IFSM2
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
Peak non-repetitive surge tp=10ms, VRM10V, Diode (Note 4)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
360
720
360
720
2850
3130
1.8
1000
-40 to +125
-40 to +125
UNITS
A
A
A
A
A
A
KW
A/µs
°C
°C
Prospective Data Sheet T0360NB25A Issue P1
Page 1 of 7
August, 2011

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WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0360NB25A
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.10
2.95
-
-
5.8
5
2
50
0.95
2
3
0.85
1.3
7.5
2.5
0.6
1000
MAX
2.40
3.25
1.32
5.37
6.3
10
±7
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 360A, VGE = 15V, Tj = 25°C
IC = 360A, VGE = 15V
Current range: 120 – 360A
VCE = VGE, IC = 30mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =360A, VCE =1250V, di/dt=700A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 7.5Ω, Rg(OFF)=18Ω, CGE=14.7nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=1250V, VCEmaxVCES,
tp10µs
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
2.05
2.25
-
-
240
320
0.9
0.3
MAX
2.35
2.55
1.43
3.11
-
-
-
-
TEST CONDITIONS
IF = 360A, Tj =25°C
IF = 360A
Current range 120-360A
IF = 360A, Vr=1250V, di/dt=700A/µs,
VGE = -15V
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
8
-
TYP
-
-
-
-
-
-
-
0.5
MAX
54.1
84.3
152
73
112
210
12
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
UNITS
V
V
V
m
A
µC
µs
J
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Prospective Data Sheet T0360NB25A Issue P1
Page 2 of 7
August, 2011

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WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0360NB25A
Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
10000
T0360NB25A
Issue P1
VGE=+15V
Figure 2 – Typical output characteristic
1000
T0360NB25A
Issue P1
Tj =25°C
1000
25°C
125°C
800
600
100
400
10
1
012345678
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 3 – Typical output characteristic
1000
T0360NB25A
Issue P1
Tj =125°C
800
VGE = 20V
200 VGE = 17V
VGE = 15V
VGE = 12V
VGE = 10V
0
01234
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
4
VCE=1250V
IC=360A
VGE=±15V
CGE=33nF
Tj=125°C
T0360NB25A
Issue P1
360A
200A
3
600
2
400
200
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 12V
VGE = 10V
0
012345
Collector to emitter saturation voltage - VCE(sat) (V)
1
0
0 5 10 15 20 25 30
Gate resistance - RG(on) ()
Prospective Data Sheet T0360NB25A Issue P1
Page 3 of 7
August, 2011