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Date:- 16 Aug, 2016
Data Sheet Issue:- 1
Insulated Gate Bi-Polar Transistor
Type T0500ND25E
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate emitter voltage
MAXIMUM
LIMITS
2500
1250
±20
UNITS
V
V
V
IC(DC)
ICRM
IECO
PMAX
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Maximum reverse emitter current, tp=100µs, (note 2 & 3)
Maximum power dissipation, IGBT (Note 2)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 850nH.
MAXIMUM
LIMITS
500
1000
500
2.58
-40 to +125
-40 to +125
UNITS
A
A
A
kW
°C
°C
Data Sheet T0500ND25E Issue 1
Page 1 of 6
August, 2016

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Characteristics
Insulated Gate Bi-polar Transistor Type T0500ND25E
IGBT Characteristics
PARAMETER
VCE(sat) Collector emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.4
3.05
-
-
5.8
5
-
68
0.9
2
5
0.65
1.1
2.6
3
0.87
2150
MAX
2.7
3.35
1.39
3.92
-
15
±10
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 500A, VGE = 15V, Tj = 25°C
IC = 500A, VGE = 15V
Current range: 167A500A
VCE = VGE, IC = 45mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 100kHz, Tj=25°C
IC =500A, VCE =1250V, di/dt=1000A/µs
VGE = ±15V, Ls=850nH
Rg(ON)= 5.6Rg(OFF)= 12CGE=15nF
Freewheel diode type E0800QC25C at
Tj=125°C
VGE=+15V, VCC=1250V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Thermal Characteristics
PARAMETER
RthJK Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
8
-
TYP
-
-
-
-
0.5
MAX
38.6
60
108
12
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate emitter capacitance added to output of gate drive
Data Sheet T0500ND25E Issue 1
Page 2 of 6
August, 2016

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Curves
Figure 1 Typical collector-emitter saturation voltage
characteristics
10000
T0500ND25E
Issue 1
VGE=+15V
1000
25°C
125°C
Insulated Gate Bi-polar Transistor Type T0500ND25E
Figure 2 Typical output characteristic
1200
T0500ND25E
Issue 1
Tj =25°C
1000
800
100
600
400
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 12V
VGE = 10V
200
10
0
123456
Collector to emitter saturation voltage - VCE(sat) (V)
7
Figure 3 Typical output characteristic
1200
T0500ND25E
Issue 1
Tj =125°C
1000
0
012345
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 4 Typical turn-on delay time vs gate
resistance
6
VCE=1250V
IC=500A
VGE=±15V
CGE=15nF
Tj=125°C
5
T0500ND25E
Issue 1
IC=500A
800
600
400
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 12V
VGE = 10V
200
4
IC=300A
3
2
1
0
0123456
Collector to emitter saturation voltage - VCE(sat) (V)
0
0
5 10 15 20 25
Gate resistance - RG(on) ()
30
Data Sheet T0500ND25E Issue 1
Page 3 of 6
August, 2016