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Date:- 1 October, 2012
Data Sheet Issue:- P1
Insulated Gate Bi-Polar Transistor
Type T0510VB45E
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
4500
2800
±20
UNITS
V
V
V
IC(DC)
ICRM
IECO
PMAX
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Maximum reverse emitter current, tp=100µs, (note 2 & 3)
Maximum power dissipation, IGBT (Note 2)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) The use of an-anti-parallel diode is recommended.
MAXIMUM
LIMITS
510
1020
510
4.1
-40 to +125
-40 to +125
UNITS
A
A
A
kW
°C
°C
Prospective Data Sheet T0510VB45E Issue P1
Page 1 of 6
October, 2012

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Insulated Gate Bi-polar Transistor Type T0510VB45E
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.75
3.60
-
-
5.2
15
-
90
3.8
3.3
10
4.2
2.3
2.7
14
2.1
1650
MAX
3.2
4.0
1.81
4.28
-
35
±10
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 510A, VGE = 15V, Tj = 25°C
IC = 510A, VGE = 15V
Current range: 170 – 510A
VCE = VGE, IC = 55mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =510A, VCE =2800V, di/dt=750A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 12Ω, Rg(OFF)=15Ω, CGE=68nF
Freewheel diode type E0660NC45C at
125°C
(Notes 3, 4 & 5)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
12
-
TYP
-
-
-
-
0.65
MAX
24.3
40.1
62.3
16
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive circuit
4) Eon integration time 15µs from 10% rising IG.
5) Eoff integration time 15µs from 90% falling VGE.
Prospective Data Sheet T0510VB45E Issue P1
Page 2 of 6
October, 2012

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Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
10000
T0510VB45E
Issue P1
VGE=+15V
Insulated Gate Bi-polar Transistor Type T0510VB45E
Figure 2 – Typical output characteristic
1200
T0510VB45E
Issue P1
Tj =25°C
1000
25°C
125°C
1000
800
100
10
600
400
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
200
1
01234567
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 3 – Typical output characteristic
1200
T0510VB45E
Issue P1
Tj=125°C
1000
800
0
012345
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
20
VCE=2800V
VGE=±15V
CGE=68nF
Tj=125°C
T0510VB45E
Issue P1
510A
15
300A
600
400
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
200
10
5
0
01234567
Collector to emitter saturation voltage - VCE(sat) (V)
0
10
20 30 40 50
Gate resistance - RG(on) ()
60
Prospective Data Sheet T0510VB45E Issue P1
Page 3 of 6
October, 2012