T0850VB25E.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 T0850VB25E 데이타시트 다운로드

No Preview Available !

WESTCODE
An IXYS Company
Date:- 21 Jan, 2011
Data Sheet Issue:- P1
Prospective Data
Insulated Gate Bi-Polar Transistor
Type T0850VB25E
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
2500
1250
±20
UNITS
V
V
V
IC(DC)
ICRM
IECO
PMAX
Tjop
Tstg
RATINGS
Continuous DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Maximum reverse emitter current, tp=100µs, (note 2 & 3)
Maximum power dissipation, IGBT (Note 2)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) The use of an anti-parallel diode is recommended.
MAXIMUM
LIMITS
850
1700
850
4.4
-40 to +125
-40 to +125
UNITS
A
A
A
kW
°C
°C
Prospective Data Sheet T0850VB25E Issue P1
Page 1 of 6
January, 2011

No Preview Available !

WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0850VB25E
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.05
2.90
-
-
5.8
8
4
110
1.1
2
6.5
2
1.5
6
6
1.4
2400
MAX
2.35
3.20
1.29
2.25
6.3
25
±15
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 850A, VGE = 15V, Tj = 25°C
IC = 850A, VGE = 15V
Current range: 280 – 850A
VCE = VGE, IC = 75mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =850A, VCE =1250V, di/dt=1500A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 3.0Ω, Rg(OFF)=6.8Ω, CGE=100nF
Freewheel diode type E0800QC25C
(Note 3)
VGE=+15V, VCC=1250V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
11
-
TYP
-
-
-
-
0.65
MAX
22.5
35.3
65.3
16
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
Prospective Data Sheet T0850VB25E Issue P1
Page 2 of 6
January, 2011

No Preview Available !

WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0850VB25E
Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
10000
T0850VB25E
Issue P1
VGE=+15V
Figure 2 – Typical output characteristic
2000
T0850VB25E
Issue P1
Tj =25°C
1000
25°C
125°C
1500
1000
100
500
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 12V
VGE = 10V
10
0
123456
Collector to emitter saturation voltage - VCE(sat) (V)
7
Figure 3 – Typical output characteristic
2000
T0850VB25E
Issue P1
Tj =125°C
1500
0
01234
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
5
VCE=1250V
IC=850A
VGE=±15V
CGE=100nF
Tj=125°C
T0850VB25E
Issue P1
4
1000
3
2
500
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 12V
VGE = 10V
0
012345
Collector to emitter saturation voltage - VCE(sat) (V)
1
0
0 2 4 6 8 10 12 14
Gate resistance - RG(on) ()
Prospective Data Sheet T0850VB25E Issue P1
Page 3 of 6
January, 2011