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An IXYS Company
Date:- 30 Oct, 2008
Data Sheet Issue:- 1
Provisional Data
Insulated Gate Bi-Polar Transistor
Type T0900EB45A
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
4500
2800
±20
UNITS
V
V
V
IC(DC)
ICRM
IF(DC)
IFRM
IFSM
IFSM2
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
Continuous DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
Peak non-repetitive surge tp=10ms, VRM10V, Diode (Note 4)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 250nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
900
1800
900
1800
14.2
15.6
7.1
2500
-40 to +125
-40 to +125
UNITS
A
A
A
A
kA
kA
kW
A/µs
°C
°C
Provisional Data Sheet T0900EB45A Issue 1
Page 1 of 8
October, 2008

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Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(I)
Qg(on)
Eon
td(off)
tf
Qg(off)
Eoff
td(on)
tr(I)
Qg(on)
Eon
td(off)
tf
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
Insulated Gate Bi-polar Transistor Type T0900EB45A
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
3.05
3.80
-
-
5.3
10
-
150
2.2
3.4
5
4.3
1.9
2.4
10
3.6
2.4
3.2
5
3.8
1.9
2.4
10
3.6
3400
MAX
3.40
4.20
1.73
2.68
-
30
±10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 900A, VGE = 15V, Tj = 25°C
IC = 900A, VGE = 15V
Current range: 400 – 1200A
VCE = VGE, IC = 90mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =900A, VCE =2800V,
VGE = ±15V, Ls=250nH
Rg(ON)= 6.6Ω, Rg(OFF)=5.0Ω, CGE=100nF
Integral diode used as freewheel diode
(Note 3 )
IC =900A, VCE = 2800V,
VGE = ±15V, Ls=250nH
Rg(ON)= 6.6Ω, Rg(OFF)=5.0Ω, CGE=100nF
Free wheel diode type E900NC450
(Note 3 )
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
µs
µs
µC
J
µs
µs
µC
J
A
MIN
-
-
-
-
-
-
-
-
TYP
3.4
3.9
-
-
610
920
2.3
0.9
MAX
3.7
4.2
2.43
1.86
-
-
-
-
TEST CONDITIONS
IF = 900A, Tj =25°C
IF = 900A
Current range 400-1200A
IF = 900A, VGE = ±15V, di/dt=2000A/µs
UNITS
V
V
V
m
A
µC
µs
J
Provisional Data Sheet T0900EB45A Issue 1
Page 2 of 8
October, 2008

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Insulated Gate Bi-polar Transistor Type T0900EB45A
Thermal Characteristics
PARAMETER
RthJK Thermal resistance junction to sink, IGBT
RthJK Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
25
-
TYP
-
-
-
-
-
-
-
1.2
MAX
14
23
35
26
41
78
35
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Provisional Data Sheet T0900EB45A Issue 1
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October, 2008

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Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
10000
T0900EB45A
AD Issue 1
VGE=+15V
Insulated Gate Bi-polar Transistor Type T0900EB45A
Figure 2 – Typical output characteristic
2000
T0900EB45A
AD Issue 1
Tj =25°C
1000
25°C
125°C
1500
1000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
100
500
10
0
2468
Instantaneous forward voltage - VCE(sat) (V)
10
Figure 3 – Typical output characteristic
2000
T0900EB45A
AD Issue 1
Tj =125°C
1500
1000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
0
01234567
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
6 T0900EB45A
AD Issue 1
VCE=2800V
VGE=±15V
CGE=100nF
Tj=125°C
IC=900A
IC=500A
5
4
500 3
0
01234567
Collector to emitter saturation voltage - VCE(sat) (V)
2
4 6 8 10 12 14 16 18
Gate resistance - RG(on) ()
Provisional Data Sheet T0900EB45A Issue 1
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October, 2008

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Figure 5 – Typical turn-off delay time vs. gate
resistance
4
T0900EB45A
AD Issue 1
VCE=2800V
VGE=±15V
CGE=100nF
3.5 Tj=125°C
IC=900A
IC=500A
Insulated Gate Bi-polar Transistor Type T0900EB45A
Figure 6 – Typical turn-on energy vs. collector current
5000
4000
T0900EB45A
AD Issue 1
RG(on)=6.6
CGE=100nF
VGE=±15V
Tj=125°C
VCE=2800V
3
3000
VCE=2000V
2.5
2000
VCE=1000V
2 1000
1.5
4
6 8 10 12 14
Gate resistance - RG(off) ()
16
Figure 7 – Typical turn-on energy vs. di/dt
7000
6000
T0900EB45A
AD Issue 1
VCE=2800V
VGE=±15V
Tj=125°C
5000
4000
IC=900A
3000
2000
1000
IC=500A
0
0
1000
2000
3000
Commutation rate - di/dt (A/µs)
0
200
400 600 800
Collector current - IC (A)
1000
Figure 8 – Typical turn-off energy vs. collector current
4000
3500
T0900EB45A
AD Issue 1
RG(off)=5
CGE=100nF
VGE=±15V
Tj=125°C
VCE=2800V
3000
2500
2000
VCE=2000V
1500
1000
VCE=1000V
500
0
200
400 600 800
Collector current - IC (A)
1000
Provisional Data Sheet T0900EB45A Issue 1
Page 5 of 8
October, 2008