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Date:- 28 Nov, 2014
Data Sheet Issue:- P2
Prospective Data
Insulated Gate Bi-Polar Transistor
Type T0900DF65A
Absolute Maximum Ratings
VCES
VCES
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Collector – emitter voltage (Tj 25°C)
Collector – emitter voltage (Tj -40°C)
Permanent DC voltage for 100 FIT failure rate
Peak gate – emitter voltage
MAXIMUM
LIMITS
6500
6500
6000
3600
±20
UNITS
V
V
V
V
V
IC
ICRM
IF(DC)
IFRM
IFSM
IFSM2
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
Peak non-repetitive surge tp=10ms, VRM10V, Diode (Note 4)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
900
1800
900
1800
7680
8450
10.6
2500
-40 to +125
-40 to +125
UNITS
A
A
A
A
A
A
kW
A/µs
°C
°C
Prospective Data Sheet T0900DF65A Issue P2
Page 1 of 5
November, 2014

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Insulated Gate Bi-polar Transistor Type T0900DF65A
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
4.4
-
-
-
-
-50
-
-
-
-
-
-
-
-
-
-
TYP
3.6
4.8
-
-
5.2
10
-
160
2.1
2.5
6
9.5
4.5
2.3
5
5.7
4900
MAX
-
5.2
2.49
3.02
-
35
+50
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 900A, VGE = 15V, Tj = 25°C
IC = 900A, VGE = 15V
Current range: 300A – 900A
VCE = VGE, IC = 900mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 10V, VGE = 0V, f = 100kHz, Tj=25°C
IC =900A, VCE =3600V, di/dt=1500A/µs
VGE = ±15V, Ls=280nH
Rg(ON)= 4.7Ω, Rg(OFF)=14Ω, CGE=133nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=3600V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3
3.4
-
-
660
1550
1.7
3.4
MAX
-
3.8
1.89
2.12
-
-
-
-
TEST CONDITIONS
IF = 900A, Tj =25°C
IF = 900A
Current range 300A – 900A
IF = 900A, VGE = -15V, di/dt=1500A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
45
-
TYP
-
-
-
-
-
-
-
1.5
MAX
9.4
14.3
27.6
16
23.4
50.6
55
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Data are obtained using integral diode as freewheeling diode
Prospective Data Sheet T0900DF65A Issue P2
Page 2 of 5
November, 2014

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Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
10000
T0900DF65A
Issue P2
Insulated Gate Bi-polar Transistor Type T0900DF65A
Figure 2 – Typical output characteristics
2000
T0900DF65A
Issue P2
Tj =25°C
1000
100
25°C
125°C
1500
1000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
10 500
1
01234567
Collector to emitter saturation voltage - VCE(sat) (V)
8
0
12345
Collector to emitter saturation voltage - VCE(sat) (V)
6
Figure 3 – Typical output characteristics
2000
T0900DF65A
Issue P2
Tj =125°C
Figure 4 – Typical diode forward characteristics
10000
T0900DF65A
Issue P2
1500
1000
25°C
125°C
1000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
100
500 10
0
1234567
Collector to emitter saturation voltage - VCE(sat) (V)
8
1
01234
Instantaneous forw ard voltage - VF (V)
5
Prospective Data Sheet T0900DF65A Issue P2
Page 3 of 5
November, 2014