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Date:- 28 Nov, 2014
Data Sheet Issue:- P2
Prospective Data
Insulated Gate Bi-Polar Transistor
Type T0900DF65A
Absolute Maximum Ratings
VCES
VCES
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Collector – emitter voltage (Tj 25°C)
Collector – emitter voltage (Tj -40°C)
Permanent DC voltage for 100 FIT failure rate
Peak gate – emitter voltage
MAXIMUM
LIMITS
6500
6500
6000
3600
±20
UNITS
V
V
V
V
V
IC
ICRM
IF(DC)
IFRM
IFSM
IFSM2
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
Peak non-repetitive surge tp=10ms, VRM10V, Diode (Note 4)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
900
1800
900
1800
7680
8450
10.6
2500
-40 to +125
-40 to +125
UNITS
A
A
A
A
A
A
kW
A/µs
°C
°C
Prospective Data Sheet T0900DF65A Issue P2
Page 1 of 5
November, 2014

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Insulated Gate Bi-polar Transistor Type T0900DF65A
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
4.4
-
-
-
-
-50
-
-
-
-
-
-
-
-
-
-
TYP
3.6
4.8
-
-
5.2
10
-
160
2.1
2.5
6
9.5
4.5
2.3
5
5.7
4900
MAX
-
5.2
2.49
3.02
-
35
+50
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 900A, VGE = 15V, Tj = 25°C
IC = 900A, VGE = 15V
Current range: 300A – 900A
VCE = VGE, IC = 900mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 10V, VGE = 0V, f = 100kHz, Tj=25°C
IC =900A, VCE =3600V, di/dt=1500A/µs
VGE = ±15V, Ls=280nH
Rg(ON)= 4.7Ω, Rg(OFF)=14Ω, CGE=133nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=3600V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3
3.4
-
-
660
1550
1.7
3.4
MAX
-
3.8
1.89
2.12
-
-
-
-
TEST CONDITIONS
IF = 900A, Tj =25°C
IF = 900A
Current range 300A – 900A
IF = 900A, VGE = -15V, di/dt=1500A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
45
-
TYP
-
-
-
-
-
-
-
1.5
MAX
9.4
14.3
27.6
16
23.4
50.6
55
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Data are obtained using integral diode as freewheeling diode
Prospective Data Sheet T0900DF65A Issue P2
Page 2 of 5
November, 2014

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Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
10000
T0900DF65A
Issue P2
Insulated Gate Bi-polar Transistor Type T0900DF65A
Figure 2 – Typical output characteristics
2000
T0900DF65A
Issue P2
Tj =25°C
1000
100
25°C
125°C
1500
1000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
10 500
1
01234567
Collector to emitter saturation voltage - VCE(sat) (V)
8
0
12345
Collector to emitter saturation voltage - VCE(sat) (V)
6
Figure 3 – Typical output characteristics
2000
T0900DF65A
Issue P2
Tj =125°C
Figure 4 – Typical diode forward characteristics
10000
T0900DF65A
Issue P2
1500
1000
25°C
125°C
1000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
100
500 10
0
1234567
Collector to emitter saturation voltage - VCE(sat) (V)
8
1
01234
Instantaneous forw ard voltage - VF (V)
5
Prospective Data Sheet T0900DF65A Issue P2
Page 3 of 5
November, 2014

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Figure 5 – Safe operating area (IGBT)
3000
Maximum Ls=200nH
Tj=125°C
Non-repetive
T0900DF65A
Issue P2
2500
2000
1500
1000
Insulated Gate Bi-polar Transistor Type T0900DF65A
Figure 6 – Safe operating area (Diode)
1000
800
T0900DF65A
Issue P2
Tj=125°C
di/dt=1500A/µs
Ls=200nH
600
400
200
500
0
0 1000 2000 3000 4000 5000 6000 7000
Collector-emitter voltage - VCE (V)
0
0 1000 2000 3000 4000 5000 6000 7000
Reverse voltage - Vr(V)
Figure 7 – Transient thermal impedance (IGBT)
0.1
T0900DF65A
Issue P2
0.01
E m itte r
C o lle c to r
Double side
Figure 8 – Transient thermal impedance (Diode)
0.1
T0900DF65A
Issue P2
C a th o d e
Anthode
Double side
0.01
0.001
0.001
0.0001
0.0001
0.00001
1E-05 0.0001 0.001 0.01
0.1
1
10 100
Tim e (s)
0.00001
1E-05 0.0001 0.001 0.01
0.1
1
10 100
Tim e (s)
Prospective Data Sheet T0900DF65A Issue P2
Page 4 of 5
November, 2014

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Outline Drawing & Ordering Information
Insulated Gate Bi-polar Transistor Type T0900DF65A
101A409
T0900
Fixed type
Code
ORDERING INFORMATION
(Please quote 10 digit code as below)
DF 65
Fixed Outline
Code
Voltage Grade
VCES/100
65
Typical order code: T0900DF65A (VCES = 6500V)
A
Fixed format code
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CA 90815
Tel: +1 (562) 296 6584
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The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without
prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
© IXYS UK Westcode Ltd.
Prospective Data Sheet T0900DF65A Issue P2
Page 5 of 5
November, 2014