8050W.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 8050W 데이타시트 다운로드

No Preview Available !

8050W
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package.

特征 / Features
与 8550W 互补。
Complementary pair with 8550W.

用途 / Applications
用于功率放大电路。
Power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
21
PIN1Emitter
PIN 2Base PIN 3Collector
印章代码 / Marking
hFE Classifications
Symbol
hFE Range
Marking
B
85160
HY1B
C
120200
HY1C
D
160300
HY1D
http://www.fsbrec.com
1/6

No Preview Available !

8050W
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
40
25
5.0
1.5
0.5
200
150
-55150
单位
Unit
V
V
V
A
A
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=0.1mA IE=0
VCEO IC=2.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=35V
IE=0
Emitter Base Cut-Off Current
IEBO VEB=6.0V IC=0
hFE(1) VCE=1.0V IC=100mA
DC Current Gain
hFE(2) VCE=1.0V IC=800mA
hFE(3) VCE=1.0V IC=5.0mA
Collector-Emitter Saturation Voltage VCE(sat) IC=800mA IB=80mA
Base-Emitter Saturation Voltage
VBE(sat) IC=800mA IB=80mA
Collector-Emitter Voltage
VBE VCE=1.0V IC=10mA
Transition Frequency
Output Capacitance
fT VCE=10V IC=50mA
Cob
VCB=10V
f=1.0MHz
IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
40 V
25 V
6.0 V
0.1 μA
0.1 μA
85 300
40
45
0.28 0.5 V
0.98 1.2 V
0.66 1.0 V
100 190
MHz
9.0 pF
http://www.fsbrec.com
2/6

No Preview Available !

8050W
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
http://www.fsbrec.com
3/6