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MMBTA56W, SMMBTA56W
Driver Transistor
PNP Silicon
Features
Moisture Sensitivity Level: 1
ESD Rating:
Human Body Model 4 kV
Machine Model 400 V
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
Value
80
80
4.0
500
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
TA = 25°C
PD mW
150
Thermal Resistance, Junction to Ambient
RqJA
833 °C/W
Junction and Storage Temperature
TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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SC70 (SOT323)
CASE 419
STYLE 3
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
FM M G
G
1
FM = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
ORDERING INFORMATION
Device
MMBTA56WT1G
SMMBTA56WT1G
SMMBTA56WT3G
Package
SC70
(PbFree)
SC70
(PbFree)
SC70
(PbFree)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 4
1
Publication Order Number:
MMBTA56WT1/D

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MMBTA56W, SMMBTA56W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
EmitterBase Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
CollectorEmitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
BaseEmitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Note 2)
(IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
V(BR)CEO
V(BR)EBO
ICES
ICBO
hFE
VCE(sat)
VBE(on)
fT
Min
80
4.0
100
100
50
Max
0.1
0.1
0.25
1.2
Unit
Vdc
Vdc
mAdc
mAdc
Vdc
Vdc
MHz
5.0 ms
+10 V
0
tr = 3.0 ns
TURN-ON TIME
-1.0 V
VCC
+40 V
TURN-OFF TIME
+VBB
VCC
+40 V
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
100
Vin RB
5.0 mF
100
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
RL
OUTPUT
* CS t 6.0 pF
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MMBTA56W, SMMBTA56W
200
VCE = -2.0 V
TJ = 25°C
100
70
50
30
20
-2.0 -3.0 -5.0 -7.0 -10
-20 -30 -50 -70 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 2. CurrentGain — Bandwidth Product
100
70 TJ = 25°C
50 Cibo
30
20
10
7.0
5.0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
Cobo
-50 -100
1.0 k
700
500
ts
300
200
100
70
50
30
VCC = -40 V
IC/IB = 10
20 IB1 = IB2
TJ = 25°C
10
-5.0 -7.0 -10
td @ VBE(off) = -0.5 V
-20 -30 -50 -70 -100
tf
tr
-200 -300 -500
IC, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
-1.0 k
-700
-500
-300
-200
-100
-70
-50
-30
-20
TA = 25°C
100 ms
1.0 ms
1.0 s
TC = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-10
-1.0
-2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. ActiveRegion Safe Operating Area
400
TJ = 125°C
200
25°C
VCE = -1.0 V
-55°C
100
80
60
40
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 6. DC Current Gain
-500
-1.0
TJ = 25°C
-0.8
VBE(sat) @ IC/IB = 10
-0.6
VBE(on) @ VCE = -1.0 V
-0.4
-0.2
VCE(sat) @ IC/IB = 10
0
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 7. “ON” Voltages
-500
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MMBTA56W, SMMBTA56W
-1.0
-0.8
IC =
-50 mA
-0.6
TJ = 25°C
IC = IC = IC =
-100 mA -250 mA -500 mA
-0.8
-1.2
-1.6
-0.4
IC =
-0.2 -10 mA
-2.0 RqVB for VBE
-2.4
0
-0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
-50
-2.8
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
Figure 9. BaseEmitter Temperature
Coefficient
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MMBTA56W, SMMBTA56W
PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE N
D
e1
3
HE
1
E
2
b
e
0.05 (0.002)
A1
A A2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN
NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.70 REF
b 0.30
0.35
0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15
1.24
1.35
e 1.20 1.30 1.40
e1 0.65 BSC
L 0.20
0.38
0.56
HE 2.00 2.10 2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
c STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MMBTA56WT1/D