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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BZX79 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1999 May 25
2002 Feb 27

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NXP Semiconductors
Voltage regulator diodes
Product data sheet
BZX79 series
FEATURES
Total power dissipation: max. 500 mW
Two tolerance series: ±2%, and approx. ±5%
Working voltage range: nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
Low voltage stabilizers or voltage references.
handbook, halfpage k
a
MAM239
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24 ±2% (BZX79-B) and
approx. ±5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
IF continuous forward current
IZSM non-repetitive peak reverse current
Ptot total power dissipation
PZSM
Tstg
Tj
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
CONDITIONS
MIN. MAX. UNIT
250 mA
tp = 100 μs; square wave;
Tj = 25 °C prior to surge
Tamb = 50 °C; note 1
Tamb = 50 °C; note 2
tp = 100 μs; square wave;
Tj = 25 °C prior to surge; see Fig.3
see Tables 1 and 2
400
500
40
65 +200
A
mW
mW
W
°C
65 +200 °C
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature 50 °C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
CONDITIONS
IF = 10 mA; see Fig.4
MAX.
0.9
UNIT
V
2002 Feb 27
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NXP Semiconductors
Voltage regulator diodes
SYMBOL
PARAMETER
IR reverse current
BZX79-B/C2V4
BZX79-B/C2V7
BZX79-B/C3V0
BZX79-B/C3V3
BZX79-B/C3V6
BZX79-B/C3V9
BZX79-B/C4V3
BZX79-B/C4V7
BZX79-B/C5V1
BZX79-B/C5V6
BZX79-B/C6V2
BZX79-B/C6V8
BZX79-B/C7V5
BZX79-B/C8V2
BZX79-B/C9V1
BZX79-B/C10
BZX79-B/C11
BZX79-B/C12
BZX79-B/C13
BZX79-B/C15 to BZX79-B/C75
CONDITIONS
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 0.7VZnom
Product data sheet
BZX79 series
MAX. UNIT
50 μA
20 μA
10 μA
5 μA
5 μA
3 μA
3 μA
3 μA
2 μA
1 μA
3 μA
2 μA
1 μA
700 nA
500 nA
200 nA
100 nA
100 nA
100 nA
50 nA
2002 Feb 27
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Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24
Tj = 25 °C unless otherwise specified.
BZX79-
Bxxx
Cxxx
WORKING VOLTAGE
VZ (V)
at IZtest = 5 mA
Tol. ±2% (B)
Tol. approx.
±5% (C)
DIFFERENTIAL RESISTANCE
rdif (Ω)
at IZtest = 1 mA at IZtest = 5 mA
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 5 and 6)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 μs; Tamb = 25 °C
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX.
MAX.
2V4 2.35 2.45 2.2 2.6 275 600 70 100 3.5 1.6 0
450
6.0
2V7 2.65 2.75 2.5 2.9 300 600 75 100 3.5 2.0 0
450
6.0
3V0 2.94 3.06 2.8 3.2 325 600 80 95 3.5 2.1 0
450
6.0
3V3 3.23 3.37 3.1 3.5 350 600 85 95 3.5 2.4 0
450
6.0
3V6 3.53 3.67 3.4 3.8 375 600 85 90 3.5 2.4 0
450
6.0
3V9 3.82 3.98 3.7 4.1 400 600 85 90 3.5 2.5 0
450
6.0
4V3 4.21 4.39 4.0 4.6 410 600 80 90 3.5 2.5 0
450
6.0
4V7 4.61 4.79 4.4 5.0 425 500 50 80 3.5 1.4 0.2 300
6.0
5V1 5.00 5.20 4.8 5.4 400 480 40 60 2.7 0.8 1.2 300
6.0
5V6 5.49 5.71 5.2 6.0 80
400 15 40 2.0 1.2 2.5 300
6.0
6V2 6.08 6.32 5.8 6.6 40
150 6
10 0.4 2.3 3.7 200
6.0
6V8 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200
6.0
7V5 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150
4.0
8V2 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150
4.0
9V1 8.92 9.28 8.5 9.6 40
100 6
15 3.8 5.5 7.0 150
3.0
10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90
3.0
11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85
2.5
12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85
2.5
13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80
2.5
15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75
2.0
16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75
1.5
18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70
1.5
20 19.60 20.40 18.8 21.2 60 225 15 55 12.3 15.6 18.0 60
1.5
22 21.60 22.40 20.8 23.3 60 250 20 55 14.1 17.6 20.0 60
1.25
24 23.50 24.50 22.8 25.6 60 250 25 70 15.9 19.6 22.0 55
1.25
MAX.

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Table 2 Per type, BZX79-B/C27 to BZX79-B/C75
Tj = 25 °C unless otherwise specified.
BZX79-
Bxxx
Cxxx
WORKING VOLTAGE
VZ (V)
at IZtest = 2 mA
Tol. ±2% (B)
Tol. approx.
±5% (C)
DIFFERENTIAL RESISTANCE
rdif (Ω)
at IZtest = 0.5 mA at IZtest = 2 mA
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 5 and 6)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 μs; Tamb = 25 °C
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX.
MAX.
MAX.
27 26.50 27.50 25.1 28.9 65 300 25 80 18.0 22.7 25.3 50
1.0
30 29.40 30.60 28.0 32.0 70 300 30 80 20.6 25.7 29.4 50
1.0
33 32.30 33.70 31.0 35.0 75 325 35 80 23.3 28.7 33.4 45
0.9
36 35.30 36.70 34.0 38.0 80 350 35 90 26.0 31.8 37.4 45
0.8
39 38.20 39.80 37.0 41.0 80 350 40 130 28.7 34.8 41.2 45
0.7
43 42.10 43.90 40.0 46.0 85 375 45 150 31.4 38.8 46.6 40
0.6
47 46.10 47.90 44.0 50.0 85 375 50 170 35.0 42.9 51.8 40
0.5
51 50.00 52.00 48.0 54.0 90 400 60 180 38.6 46.9 57.2 40
0.4
56 54.90 57.10 52.0 60.0 100 425 70 200 42.2 52.0 63.8 40
0.3
62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35
0.3
68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35
0.25
75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35
0.2