8050T.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 8050T 데이타시트 다운로드

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8050T
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package.

特征 / Features
与 8550T 互补。
Complementary pair with 8550T.
用途 / Applications
用于功率放大电路。
Power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1
2
3
PIN1Base
PIN 2Collector
印章代码 / Marking
hFE Classifications
Symbol
hFE Range
Marking
B
85160
HY1B
PIN 3Emitter
C
120200
HY1C
D
160300
HY1D
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8050T
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Base - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
40
25
6.0
1.5
0.5
625
150
-55150
单位
Unit
V
V
V
A
A
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=0.1mA IE=0
VCEO IC=2.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=35V
IE=0
Emitter Base Cut-Off Current
IEBO VEB=6.0V IC=0
hFE(1) VCE=1.0V IC=100mA
DC Current Gain
hFE(2) VCE=1.0V IC=800mA
Collector to Emitter Saturation
Voltage
hFE(3) VCE=1.0V
VCE(sat) IC=800mA
IC=5.0mA
IB=80mA
Emitter to Base Saturation Voltage VBE(sat) IC=800mA IB=80mA
Emitter to Base Voltage
VBE VCE=1.0V IC=10mA
Transition Frequency
Collector Output Capacitance
fT VCE=10V IC=50mA
Cob
VCB=10V
f=1.0MHz
IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
40 V
25 V
6.0 V
0.1 μA
0.1 μA
85 300
40
45
0.28 0.5 V
0.98 1.2 V
0.66 1.0 V
100 190
MHz
9.0 pF
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8050T
Rev.E Mar.-2016

电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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