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2SA608 PNP Silicon Epitaxial Planar Transistor
Low - Frequency General - Purpose Amplifier Applications.
The transistor is subdivided into two groups F
and G according to its DC current gain.
Applications:
Capable of being used in the low frequency to
high frequency range.
Features:
Large current capacity and wide ASO.
1.Emitter 2.Base 3.Collector
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
-ICP
Ptot
Tj
TS
Value
50
50
6
150
400
500
150
-55 to +150
Unit
V
V
V
mA
mA
mW
OC
OC
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7/15/2011

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Characteristics at Tamb=25 OC
Parameter
DC Current Gain
at -VCE=6V, -IC=1mA
Current Gain Group F
G
at -VCE=6V, -IC=0.1mA
Symbol
hFE
hFE
hFE
Collector Base Breakdown Voltage
at -IC=10μA
Collector Emitter Breakdown Voltage
at -IC=1mA
Emitter Base Breakdown Voltage
at -IE=10μA
Collector Cutoff Current
at -VCB=40V
Emitter Cutoff Current
at -VEB=5V
Collector Emitter Saturation Voltage
at -IC=100mA, -IB=10mA
Base Emitter Saturation Voltage
at -IC=100mA, -IB=10mA
Gain Bandwidth Product
at -VCE=6V, -IC=10mA
Output Capacitance
at -VCB=6V, f=1MHz
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-ICBO
-IEBO
-VCE(sat)
-VBE(sat)
fT
COB
Min.
160
280
70
60
50
6
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
200
4.5
Max.
Unit
320 -
560 -
--
-V
-V
-V
0.1 μA
0.1 μA
0.3 V
1V
- MHz
- pF
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7/15/2011