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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA608 TRANSISTOR (PNP)
FEATURES
z Capable of being used in the low frequency to high
frequency range.
z Large current capacity and wide ASO.
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-30
-5
-100
400
150
-55-150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CBO IC=-100μA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-100μA, IC=0
ICBO
VCB=-25V, IE=0
IEBO VEB=-4V, IC=0
hFE VCE=-6V, IC=-1mA
VCE(sat) IC=-50mA, IB=-5mA
fT VCE=-6V, IC=-10mA
Cob VCB=-6V, f=1MHz
-40
-30
-5
60
Typ
180
7
Max
-1
-1
560
-0.5
Unit
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF hFE
Rank
D
Range
60-120
E
100-200
F
160-320
G
280-560
A,May,2011