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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SA673
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency amplifier applications
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
-35
-35
-5
-500
400
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Voltage
BVCBO -35
Collector-Emitter Breakdown Volatge BVCEO -35
Emitter-Base Breakdown Volatge
BVEBO
-5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
VBE(sat)
-
-
-
DC Current Gain(1)
hFE1
hFE2
60
35
Transition Frequency
fT -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-0.1
-
-
-
190
Max
-
-
-
-0.5
-0.5
-0.6
-1.2
320
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
Test Conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-20V, IE=0
VEB=-5V, IC=0
IC=-150mA, IB=-15mA
IC=-150mA, IB=-15mA
IC=-10mA, VCE=-3V
IC=-500mA, VCE=-3V
IC=-20mA, VCE=-6V
Classification of hFE1
Rank
B
C
Range
60~120
100~200
D
160~320