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2SA719/2SA720(PNP)
TO-92 Bipolar Transistors
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
Features
For low-frequency power amplification
and driver amplification
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage 2SA719
2SA720
VCEO
Collector-Emitter Voltage 2SA719
2SA720
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Power Dissipation
TJ Junction Temperature
Tstg Storage Temperature
Value
-30
-60
-25
-50
-5
-500
625
150
-55-150
Units
V
V
V
mA
mW
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
2SA719
2SA720
Collector-emitter breakdown voltage
2SA719
2SA720
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Transition frequency
fT
Collector Output Capacitance
CLASSIFICATION hFE(1)
Rank
Range
Cob
Q
85-170
Test conditions
IC= -10uA, IE=0
IC= -10mA ,IB=0
IE= -10uA, IC=0
VCB= -20V,IE=0
VEB= -4V,IC=0
VCE=-10V, IC= -150mA
VCE=-10V, IC= -500mA
IC=-300mA, IB= -30mA
IC= -300mA, IB=-30mA
VCE= -10V, IC= -50mA
f = 200MHz
VCB=-10V,IE=0,f=1MHZ
R
120-240
MIN
-30
-60
-25
-50
-5
85
40
TYP MAX UNIT
V
V
-0.1
-0.1
340
V
uA
uA
-0.6 V
-1.5 V
200 MHz
15 pF
S
170-340

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Typical Characteristics
2SA719/2SA720(PNP)
TO-92 Bipolar Transistors

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2SA719/2SA720(PNP)
TO-92 Bipolar Transistors