8050.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 8050 데이타시트 다운로드

No Preview Available !

8050
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

特征 / Features
PC,IC 大,与 8550 互补。
High PC and IC, complementary pair with 8550.
用途 / Applications
用于 2W 乙类推挽功放。
2W output amplifier of portable radios in class B push-pull operation.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
123
PIN1Collector
PIN 2Base PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
B
85~160
C
120~200
D
160~300
http://www.fsbrec.com
1/6

No Preview Available !

8050
Rev.F Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
数值
Rating
40
25
6
1.5
0.5
1.0
150
-55150
单位
Unit
V
V
V
A
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=0.1mA IE=0
VCEO IC=2.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=35V
IE=0
Emitter Cut-Off Current
IEBO VEB=6.0V IC=0
hFE(1) VCE=1.0V IC=100mA
DC Current Gain
hFE(2) VCE=1.0V IC=800mA
Collector to Emitter Saturation
Voltage
hFE(3) VCE=1.0V
VCE(sat) IC=800mA
IC=5.0mA
IB=80mA
Base to Emitter Saturation Voltage VBE(sat) IC=800mA IB=80mA
Base to Emitter Voltage
VBE VCE=1.0V IC=10mA
Transition Frequency
Collector Output Capacitance
fT IC=50mA VCE=10V
Cob
VCB=10V
f=1.0MHz
IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
40 V
25 V
6.0 V
0.1 μA
0.1 μA
85 300
40
45
0.28 0.5 V
0.98 1.2 V
0.66 1.0 V
100 200
MHz
15 pF
http://www.fsbrec.com
2/6

No Preview Available !

8050
Rev.F Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
http://www.fsbrec.com
3/6