8050G.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 8050G 데이타시트 다운로드

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8050G
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

特征 / Features
PC,IC 大,与 8550 互补。无卤产品。
High PC and IC, complementary pair with 8550.HF Product.
用途 / Applications
用于 2W 乙类推挽功放。
2W output amplifier of portable radios in class B push-pull operation.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
123
PIN1Collector
PIN 2Base PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
B
85~160
C
120~200
D
160~300
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8050G
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
40
25
6.0
1.5
0.5
1.0
150
-55150
单位
Unit
V
V
V
A
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
VCBO
VCEO
IC=0.1mA
IC=2.0mA
IE=0
IB=0
Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=35V
IE=0
Emitter Cut-Off Current
IEBO VEB=6.0V IC=0
hFE(1) VCE=1.0V IC=100mA
DC Current Gain
hFE(2) VCE=1.0V IC=800mA
Collector to Emitter Saturation
Voltage
hFE(3) VCE=1.0V
VCE(sat) IC=800mA
IC=5.0mA
IB=80mA
Base to Emitter Saturation Voltage VBE(sat) IC=800mA IB=80mA
Base to Emitter Voltage
VBE VCE=1.0V IC=10mA
Transition Frequency
Collector Output Capacitance
fT VCE=10V IC=50mA
Cob
VCB=10V
f=1.0MHz
IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
40 V
25 V
6.0 V
0.1 μA
0.1 μA
85 300
40
45
0.28 0.5 V
0.98 1.2 V
0.66 1.0 V
100 200
MHz
15 pF
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8050G
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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