9013.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 9013 데이타시트 다운로드

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9013
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

特征 / Features
PC 、IC 大, hFE 特性极好,与 9012 互补。
High PC and IC, excellent hFE linearity, complementary pair with 9012.

用途 / Applications
用于收音机推挽功放。
Amplifier of portable radios in class B push-pull operation.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
123
PIN1Collector
PIN 2Base PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
D
64~91
E
78~112
F
96~135
GH
I
112~166 144~202 188~276
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9013
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
40
20
5.0
500
100
625
150
-55150
单位
Unit
V
V
V
mA
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=0.1mA IE=0
VCEO IC=1.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=25V
IE=0
Emitter Cut-Off Current
IEBO VEB=3.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE(1)
hFE(2)
VCE=1.0V
VCE=1.0V
VCE(sat) IC=500mA
IC=50mA
IC=500mA
IB=50mA
Base to Emitter Saturation Voltage VBE(sat) IC=500mA IB=50mA
Base to Emitter Voltage
VBE VCE=1.0V IC=10mA
最小值 典型值 最大值 单位
Min Typ Max Unit
40 V
20 V
5.0 V
0.1 μA
0.1 μA
64 276
40
0.16 0.6 V
0.91 1.2
0.67 0.7
V
V
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9013
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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