9014.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 9014 데이타시트 다운로드

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9014
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

特征 / Features
PC 大,hFE 高而且特性好,与 9015 互补。
High PC and hFE excellent hFE linearity, complementary pair with 9015.

用途 / Applications
用于低电平、低噪声的前置放大器。
Low frequency, low noise amplifier.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
123
PIN1Collector
PIN 2Base PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
A
60~150
B
100~300
C
200~600
D
400~1000
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9014
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
50
45
5.0
100
450
150
-55150
单位
Unit
V
V
V
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=0.1mA IE=0
VCEO IC=1.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=50V
IE=0
Emitter Cut-Off Current
IEBO VEB=5.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE VCE=5.0V
VCE(sat) IC=100mA
IC=1.0mA
IB=5.0mA
Base to Emitter Saturation Voltage VBE(sat) IC=100mA IB=5.0mA
Base to Emitter Voltage
VBE VCE=5.0V IC=2.0mA
Transition Frequency
Collector Output Capacitance
Noise Figure
fT VCE=5.0V IC=10mA
Cob
VCB=10V
f=1.0MHz
IE=0
VCE=5.0V IC=0.2mA
NF Rg=2.0Kf=1.0K
f=200Hz
最小值 典型值 最大值 单位
Min Typ Max Unit
50 V
45 V
5.0 V
0.05 μA
0.05 μA
60 1000
0.14 0.3 V
0.84 1.0 V
0.63 0.7 V
150 270
MHz
2.2 3.5 pF
0.9 10 dB
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9014
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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