2SA683.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 2SA683 데이타시트 다운로드

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2SA683
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92LM 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92LM Plastic Package.
特征 / Features
与 2SC1383 互补。
Complementary pair with 2SC1383.
用途 / Applications
用于音频功率放大和驱动。
AF power amplifier and driver.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
123
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
Q
85~170
R
120~240
S
170~340
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2SA683
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current – Continuous(Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
DATA SHEET
数值
Rating
-30
-25
-5.0
-1.0
-1.5
1.0
150
-55150
单位
Unit
V
V
V
A
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=-10μA IE=0
VCEO IC=-2.0mA IB=0
VEBO IE=-10μA IC=0
Collector Cut-Off Current
ICBO VCB=-20V IE=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE(1)
hFE(2)
VCE(sat)
VCE=-10V
VCE=-5.0V
IC=-500mA
IC=-500mA
IC=-1.0A
IB=-50mA
Base to Emitter Saturation Voltage VBE(sat) IC=-500mA IB=-50mA
Transition Frequency
Collector output capacitance
fT VCE=-10V IC=-50mA
Cob
VCB=-10V
f=1.0MHz
IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-30 V
-25 V
-5.0 V
-0.1 μA
85 340
50
-0.2 -0.4 V
-0.85 -1.2 V
200 MHz
20 30 pF
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2SA683
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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2SA683
Rev.E Mar.-2016
外形尺寸图 / Package Dimensions
DATA SHEET
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2SA683
Rev.E Mar.-2016
印章说明 / Marking Instructions
BR
A683
Q ****
DATA SHEET
说明:
BR:   
A683: 
Q:
****: 
Note:
BR:
A683:
Q:
****:
为公司代码
为型号代码
为 hFE 分档代码
为生产批号代码,随生产批号变化。
Company Code.
Product Type.
hFE Classifications Symbol
Lot No. Code,code change with Lot No.
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