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2SA683 / 2SA684 PNP Silicon Epitaxial Planar Transistor
for low frequency power amplification and
driver amplification
The transistor is subdivided into three group,
Q, R and S according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
2SA683
2SA684
2SA683
2SA684
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.19g
Symbol
-VCBO
-VCEO
-VEBO
-IC
-IP
Ptot
Tj
TS
Value
30
50
25
40
5
1
1.5
1
150
- 55 to + 150
Unit
V
V
V
A
A
W
OC
OC
Characteristics at Tamb = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 10 V, -IC = 500 mA Current Gain Group Q hFE
85
- 170 -
R hFE
120
-
240 -
S hFE
170
-
340 -
at -VCE = 5 V, -IC = 1 A
hFE 50
-
--
Collector Cutoff Current
at -VCB = 20 V
-ICBO
-
- 0.1 µA
Collector Base Breakdown Voltage
at -IC = 10 µA
2SA683
2SA684
-V (BR)CBO
30
50
-
-
-V
-
Collector Emitter Breakdown Voltage
at -IC = 2 mA
2SA683
2SA684
-V (BR)CEO
25
40
-
-
-V
-
Emitter Base Breakdown Voltage
at -IC = 10 µA
-V(BR)EBO
5
-
-V
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-VCEsat
-
- 0.4 V
Base Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-VBEsat
-
- 1.2 V
Transition Frequency
at -VCB = 10 V, IE = 50 mA, f = 200 MHz
fT - 200 - MHz
Collector Output Capacitance
at -VCB = 10 V, IE = 0, f = 1 MHz
Cob -
- 30 pF
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