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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SA683 TRANSISTOR (PNP)
FEATURES
z Complementary Pair with 2SC1383
z Allowing Supply with the Radial Taping.
TO – 92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-30
-25
-5
-1
0.75
167
150
-55~+150
Unit
V
V
V
A
W
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-10µA,IE=0
-30
V
V(BR)CEO IC=-2mA,IB=0
-25
V
V(BR)EBO IE=-10µA,IC=0
-5
V
ICBO
VCB=-20V,IE=0
-0.1 μA
IEBO
hFE(1)*
VEB=-5V,IC=0
VCE=-10V, IC=-0.5A
-0.1 μA
85 340
hFE(2)
VCE=-5V, IC=-1A
50
VCE(sat)
IC=-500mA,IB=-50mA
-0.4 V
VBE (sat) IC=-500mA,IB=-50mA
-1.2 V
Cob VCB=-10V,IE=0, f=1MHz
30 pF
fT VCE=-10V,IC=-50mA, f=200MHz 200 MHz
CLASSIFICATION OF hFE(1)
RANK
Q
RANGE
85-170
R
120-240
S
170-340
A,Dec,2010