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VB40M120C-E3, VB40M120C-M3, VB40M120CHM3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
TMBS ®
TO-263AB
K
2
1
VB40M120C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
2 x 20 A
120 V
250 A
0.64 V
150 °C
TO-263AB
Diode variations
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, and HM3 suffix meets JESD 201 class 2 whisker
test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IFSM
dV/dt
TJ, TSTG
VB40M120C
120
40
20
250
10 000
-40 to +150
UNIT
V
A
V/μs
°C
Revision: 03-Jan-17
1 Document Number: 89468
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VB40M120C-E3, VB40M120C-M3, VB40M120CHM3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
Reverse current per diode
VR = 90 V
VR = 120 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 20 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.54
0.64
0.79
0.46
0.54
0.64
4
3
-
6
MAX.
-
-
0.89
-
-
0.72
-
-
500
32
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
RJC
VB40M120C
1.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-263AB
VB40M120C-E3/4W
1.39
TO-263AB
VB40M120C-E3/8W
1.39
TO-263AB
TO-263AB
VB40M120C-M3/I
VB40M120CHM3/I (1)
1.39
1.39
Note
(1) AEC-Q101 qualified
PACKAGE CODE
4W
8W
I
I
BASE QUANTITY
50/tube
800/reel
800/reel
800/reel
DELIVERY MODE
Tube
Tape and reel
Tape and reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50
Resistive or Inductive Load
40
30
20
10
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
18.0
16.0
D = 0.5 D = 0.8
D = 0.3
14.0 D = 0.2
12.0 D = 0.1
D = 1.0
10.0
8.0
T
6.0
4.0
2.0
D = tp/T
tp
0.0
0 2 4 6 8 10 12 14 16 18 20 22 24
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 03-Jan-17
2 Document Number: 89468
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VB40M120C-E3, VB40M120C-M3, VB40M120CHM3
www.vishay.com
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
10 TA = 150 °C
TA = 125 °C
1 TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1 1 10 100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.1
0.01
0.1
1
10 100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.190 (4.83)
0.160 (4.06)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591(15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 MIN.
(10.66)
0.055 (1.40)
0.047 (1.19)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.08
(2.032)
MIN.
0.105 (2.67)
0.095 (2.41)
0.33
(8.38)
MIN.
0.15
(3.81) MIN.
Revision: 03-Jan-17
3 Document Number: 89468
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 13-Jun-16
1 Document Number: 91000