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ESH3B-M3, ESH3C-M3, ESH3D-M3
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
DO-214AB (SMC)
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
trr
3.0 A
100 V, 150 V, 200 V
25 ns
VF 0.90 V
TJ max.
Package
175 °C
DO-214AB (SMC)
Diode variations
Single die
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converter and inverter for
both consumer, and automotive.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ESH3B
Device marking code
EHB
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRMM
VRMS
VDC
IF(AV)
IFSM
100
70
100
Operating junction and storage temperature range
TJ, TSTG
ESH3C
EHC
150
105
150
3.0
125
-55 to +175
ESH3D
EHD
200
140
200
UNIT
V
A
°C
Revision: 25-Feb-16
1 Document Number: 88461
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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ESH3B-M3, ESH3C-M3, ESH3D-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward voltage IF = 3 A
VF (1)
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
TA = 125 °C
IR
Maximum reverse recovery time
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
trr
Typical reverse recovery time
IF = 3 A, VR = 30 V,
TJ = 25 °C
dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 100 °C
trr
Typical stored charge
IF = 3 A, VR = 30 V,
TJ = 25 °C
dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 100 °C
Qrr
Typical junction capacitance
4.0 V, 1 MHz
CJ
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
VALUE
0.90
5.0
150
25
40
55
25
60
70
UNIT
V
µA
ns
nC
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ESH3B
ESH3C
Typical thermal resistance
RJA (1)
RJL (1)
50
15
Note
(1) Units mounted on PCB with 12.0 mm x 12.0 mm land areas
ESH3D
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
ESH3D-M3/57T
0.211
57T
ESH3D-M3/9AT
0.211
9AT
BASE QUANTITY
850
3500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 25-Feb-16
2 Document Number: 88461
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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ESH3B-M3, ESH3C-M3, ESH3D-M3
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 25 50 75 100 125 150 175
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
1000
100
10
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
0.1
0.01
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
125
100
75
50
25
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
1000
100
10
1
0.1 1 10 100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
TJ = 175 °C
10 TJ = 150 °C
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.2
0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (V)
1.2
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
Revision: 25-Feb-16
3 Document Number: 88461
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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ESH3B-M3, ESH3C-M3, ESH3D-M3
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
Mounting Pad Layout
0.185 (4.69) MAX.
0.126 (3.20) MIN.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.320 (8.13) REF.
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 25-Feb-16
4 Document Number: 88461
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 08-Feb-17
1
Document Number: 91000