C03DE170HP.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 C03DE170HP 데이타시트 다운로드

No Preview Available !

STC03DE170HP
Hybrid emitter switched bipolar transistor
ESBT® 1700V - 3A - 0.33 W
Features
VCS(ON) IC RCS(ON)
1 V 3 A 0.33
Low equivalent on resistance
Very fast-switch, up to 150 kHz
Squared RBSOA, up to 1700V
Very low CISS driven by RG = 47
Applications
Aux SMPS for three phase mains
Description
The STC03DE170HP is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STC03DE170HP is designed for use in aux
flyback smps for any three phase application.
Applications
Aux SMPS for three phase mains
TO247-4L HP
Figure 1. Internal schematic diagrams
Table 1. Device summary
Order code
Marking
STC03DE170HP
C03DE170HP
Package
TO247-4L HP
Packaging
Tube
July 2007
Rev 2
1/9
www.st.com
9

No Preview Available !

Electrical ratings
1 Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
VCS(SS) Collector-source voltage (VBS =VGS =0V)
VBS(OS) Base-source voltage (IC =0, VGS =0V)
VSB(OS) Source-base voltage (IC =0, VGS =0V)
VGS Gate-source voltage
IC Collector current
ICM Collector peak current (tP < 5ms)
IB Base current
IBM Base peak current (tP < 1ms)
Ptot Total dissipation at Tc 25°C
Tstg Storage temperature
TJ Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
max
STC03DE170HP
Value
1700
30
9
± 20
3
6
1
3
35.7
-40 to 150
125
Unit
V
V
V
V
A
A
A
A
W
°C
°C
Value
2.8
Unit
°C/W
2/9

No Preview Available !

STC03DE170HP
2 Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Symbol
ICS(SS)
IBS(OS)
ISB(OS)
IGS(OS)
VCS(ON)
hFE
VBS(ON)
VGS(th)
Ciss
QGS(tot)
ts
tf
ts
tf
VCS(dyn)
Electrical characteristics
Parameter
Test Conditions
Collector-source current
(VBS =VGS =0V)
VCS(SS) =1700V
Base-source current
(IC =0, VGS =0V)
VBS(OS) =30V
Source-base current
(IC =0, VGS =0V)
VSB(OS) =9V
Gate-source leakage
(VBS =0V)
VGS = ± 20V
Collector-source ON
voltage
VGS =10V IC =3A IB =0.6A
VGS =10V IC =1A IB =100mA
DC current gain
VGS =10V VCS =1V IC =3A
VGS =10V VCS =1V IC =1A
Base-source ON
voltage
VGS =10V IC =3A IB =0.6A
VGS =10V IC =1A IB =100mA
Gate threshold voltage VBS =VGS IB =250µA
Input capacitance
VCS =25V f =1MHz
VGS=0V
Gate-source Charge
VCS=15V
VCB=0V
VGS=10V
IC =4A
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
VClamp =1360V
IC =3A
RG =47
tp =4µs
IB =0.6A
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
VClamp =1360V
IC =3A
RG =47
tp =4µs
IB =0.3A
Collector-source
dynamic voltage
(500ns)
VCC =VClamp =400V
VGS =10V
IC =1.5A
IB = 0.1A
RG =47
tpeak =500ns
IBpeak =3A
Min. Typ. Max. Unit
100 µA
10 µA
100 µA
500 nA
1 1.2
0.3 0.6
5
10 14
1 1.2
1
1.5 3
V
V
V
V
V
750 pF
12.5 nC
1000
15
590
15
ns
ns
ns
ns
9.5 V
3/9