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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SA2050 TRANSISTOR (PNP)
FEATURES
z High Breakdown Voltage
z General Purpose Switching and Amplification
TO – 220F
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-180
-160
-6
-1.5
1.5
83
150
-55~+150
Unit
V
V
V
A
W
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
fT
Test conditions
IC=-1mA,IE=0
IC=-10mA,IB=0
IE=-100µA,IC=0
VCB=-180V,IE=0
VEB=-6V,IC=0
VCE=-5V, IC=-0.2A
VCE=-5V, IC=-1.5A
IC=-500mA,IB=-50mA
VCE=-10V,IC=-0.05A
Min Typ Max Unit
-180
V
-160
V
-6 V
-10 μA
-10 μA
60 240
50
-1 V
50 MHz
CLASSIFICATION OF hFE (1)
RANK
RANGE
R
60-140
O
100-240
A,Dec,2010